IRF3305 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF3305

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 330 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 140 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 88 nS

Cossⓘ - Capacitancia de salida: 1230 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm

Encapsulados: TO220AB

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IRF3305 datasheet

 ..1. Size:267K  international rectifier
 irf3305pbf.pdf pdf_icon

IRF3305

PD - 95758A IRF3305PbF Features HEXFET Power MOSFET Designed to support Linear Gate Drive Applications D 175 C Operating Temperature VDSS = 55V Low Thermal Resistance Junction - Case Rugged Process Technology and Design RDS(on) = 8.0m Fully Avalanche Rated G Lead-Free ID = 75A S Description This HEXFET Power MOSFET utilizes a rugged planar process technology and dev

 ..2. Size:245K  inchange semiconductor
 irf3305.pdf pdf_icon

IRF3305

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF3305 IIRF3305 FEATURES Static drain-source on-resistance RDS(on) 8.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM R

 0.1. Size:1364K  infineon
 auirf3305.pdf pdf_icon

IRF3305

AUTOMOTIVE GRADE AUIRF3305 Features HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance V(BR)DSS 55V 175 C Operating Temperature Fast Switching RDS(on) max. 8.0m Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax ID 140A Lead-Free, RoHS Compliant Automotive Qualified * Description Specifically de

 0.2. Size:331K  inchange semiconductor
 irf3305b.pdf pdf_icon

IRF3305

isc N-Channel MOSFET Transistor IRF3305B FEATURES Drain Current I = 140A@ T =25 D C Drain Source Voltage- V = 55V(Min) DSS Static Drain-Source On-Resistance R = 8m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra Low On-resistance Fast Switching ABSOLUTE MAXIMUM R

MOSTRAR MÁS

Otros transistores... IRF2907ZS, IRF2907ZS-7P, IRF3007, IRF3007L, IRF3007S, IRF3205Z, IRF3205ZL, IRF3205ZS, RFP50N06, IRF3515L, IRF3610S, IRF3703, IRF3704Z, IRF3704ZCS, IRF3704ZL, IRF3704ZS, IRF3707Z