IRF3305 MOSFET. Datasheet pdf. Equivalent

   Type Designator: IRF3305
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 330 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 140 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 100 nC
   trⓘ - Rise Time: 88 nS
   Cossⓘ - Output Capacitance: 1230 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO220AB

IRF3305 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF3305 Datasheet (PDF)

..1. Size:267K international rectifier
irf3305pbf.pdf

PD - 95758AIRF3305PbFFeaturesHEXFET Power MOSFET Designed to support Linear Gate DriveApplications D 175C Operating Temperature VDSS = 55V Low Thermal Resistance Junction - Case Rugged Process Technology and DesignRDS(on) = 8.0m Fully Avalanche RatedG Lead-FreeID = 75ASDescriptionThis HEXFET Power MOSFET utilizes a ruggedplanar process technology and dev

..2. Size:245K inchange semiconductor
irf3305.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF3305IIRF3305FEATURESStatic drain-source on-resistance:RDS(on) 8.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R

0.1. Size:1364K infineon
auirf3305.pdf

AUTOMOTIVE GRADE AUIRF3305 Features HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance V(BR)DSS 55V 175C Operating Temperature Fast Switching RDS(on) max. 8.0m Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax ID 140A Lead-Free, RoHS Compliant Automotive Qualified * Description Specifically de

0.2. Size:331K inchange semiconductor
irf3305b.pdf

isc N-Channel MOSFET Transistor IRF3305BFEATURESDrain Current I = 140A@ T =25D CDrain Source Voltage-: V = 55V(Min)DSSStatic Drain-Source On-Resistance: R = 8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra Low On-resistanceFast SwitchingABSOLUTE MAXIMUM R

8.1. Size:146K international rectifier
2n6760 irf330.pdf

PD - 90335FIRF330REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6760HEXFETTRANSISTORS JANTXV2N6760THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542]400V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF330 400V 1.00 5.5AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique proces

8.2. Size:212K samsung
irf330 irf331 irf332 irf333.pdf