IRF3708S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF3708S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 87 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 62 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 50 nS

Cossⓘ - Capacitancia de salida: 707 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm

Encapsulados: TO263

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IRF3708S datasheet

 ..1. Size:277K  international rectifier
 irf3708pbf irf3708spbf irf3708lpbf.pdf pdf_icon

IRF3708S

PD - 95363 IRF3708PbF SMPS MOSFET IRF3708SPbF IRF3708LPbF Applications HEXFET Power MOSFET l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom VDSS RDS(on) max ID and Industrial Use 30V 12m 62A l High Frequency Buck Converters for Computer Processor Power l Lead-Free Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Ful

 ..2. Size:277K  international rectifier
 irf3708pbf irf3708spbf.pdf pdf_icon

IRF3708S

PD - 95363 IRF3708PbF SMPS MOSFET IRF3708SPbF IRF3708LPbF Applications HEXFET Power MOSFET l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom VDSS RDS(on) max ID and Industrial Use 30V 12m 62A l High Frequency Buck Converters for Computer Processor Power l Lead-Free Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Ful

 ..3. Size:138K  international rectifier
 irf3708s irf3708l.pdf pdf_icon

IRF3708S

PD - 93938B IRF3708 SMPS MOSFET IRF3708S IRF3708L Applications HEXFET Power MOSFET High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom VDSS RDS(on) max ID and Industrial Use 30V 12m 62A High Frequency Buck Converters for Computer Processor Power Benefits Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanch

 ..4. Size:271K  inchange semiconductor
 irf3708s.pdf pdf_icon

IRF3708S

isc N-Channel MOSFET Transistor IRF3708S DESCRIPTION Static drain-source on-resistance RDS(on) 12m @V = 10V GS Drain Source Voltage V = 30V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS . High Frequency Synchronous Buck Converters for Computer Processor Power. ABSOLUTE MAXIMUM RA

MOSTRAR MÁS

Otros transistores... IRF3704ZL, IRF3704ZS, IRF3707Z, IRF3707ZCL, IRF3707ZCS, IRF3707ZL, IRF3707ZS, IRF3708, IRFB31N20D, IRF3709, IRF3709L, IRF3709S, IRF3709Z, IRF3709ZCS, IRF3709ZL, IRF3709ZS, IRF3710Z