IRF3805S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF3805S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 300 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 210 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 20 nS

Cossⓘ - Capacitancia de salida: 1260 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0033 Ohm

Encapsulados: TO263

 Búsqueda de reemplazo de IRF3805S MOSFET

- Selecciónⓘ de transistores por parámetros

 

IRF3805S datasheet

 ..1. Size:389K  international rectifier
 irf3805lpbf irf3805pbf irf3805spbf.pdf pdf_icon

IRF3805S

PD - 97046A IRF3805PbF IRF3805SPbF IRF3805LPbF Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance D 175 C Operating Temperature VDSS = 55V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 3.3m G Description ID = 75A This HEXFET Power MOSFET utilizes the latest S processing techniques to achieve extremely

 ..2. Size:389K  international rectifier
 irf3805pbf irf3805spbf irf3805lpbf.pdf pdf_icon

IRF3805S

PD - 97046A IRF3805PbF IRF3805SPbF IRF3805LPbF Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance D 175 C Operating Temperature VDSS = 55V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 3.3m G Description ID = 75A This HEXFET Power MOSFET utilizes the latest S processing techniques to achieve extremely

 ..3. Size:258K  inchange semiconductor
 irf3805s.pdf pdf_icon

IRF3805S

Isc N-Channel MOSFET Transistor IRF3805S FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

 0.1. Size:308K  international rectifier
 irf3805l-7ppbf irf3805s-7ppbf.pdf pdf_icon

IRF3805S

PD - 97205B IRF3805S-7PPbF IRF3805L-7PPbF Features HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 55V l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 2.6m G l Lead-Free S ID = 160A Description S (Pin 2, 3, 5, 6, 7) G (Pin 1) This HEXFET Power MOSFET utilizes the latest proc

MOSTRAR MÁS

Otros transistores... IRF3710ZS, IRF3711Z, IRF3711ZCS, IRF3711ZL, IRF3711ZS, IRF3717, IRF3805, IRF3805L, AO4468, IRF3805S-7P, IRF3808, IRF3808S, IRF4104, IRF4104G, IRF4104S, IRF540Z, IRF540ZL