IRF3805S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRF3805S
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 300 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 210 A
Tjⓘ - Максимальная температура канала: 175 °C
trⓘ - Время нарастания: 20 ns
Cossⓘ - Выходная емкость: 1260 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0033 Ohm
Тип корпуса: TO263
IRF3805S Datasheet (PDF)
irf3805lpbf irf3805pbf irf3805spbf.pdf
PD - 97046AIRF3805PbFIRF3805SPbFIRF3805LPbFFeatures Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-ResistanceD 175C Operating TemperatureVDSS = 55V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-FreeRDS(on) = 3.3mGDescriptionID = 75A This HEXFET Power MOSFET utilizes the latestSprocessing techniques to achieve extremely
irf3805pbf irf3805spbf irf3805lpbf.pdf
PD - 97046AIRF3805PbFIRF3805SPbFIRF3805LPbFFeatures Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-ResistanceD 175C Operating TemperatureVDSS = 55V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-FreeRDS(on) = 3.3mGDescriptionID = 75A This HEXFET Power MOSFET utilizes the latestSprocessing techniques to achieve extremely
irf3805s.pdf
Isc N-Channel MOSFET Transistor IRF3805SFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt
irf3805l-7ppbf irf3805s-7ppbf.pdf
PD - 97205BIRF3805S-7PPbFIRF3805L-7PPbFFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 55Vl 175C Operating Temperaturel Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 2.6mGl Lead-FreeSID = 160ADescriptionS (Pin 2, 3, 5, 6, 7)G (Pin 1) This HEXFET Power MOSFET utilizes the latestproc
auirf3805strl.pdf
PD - 96319AUTOMOTIVE GRADEAUIRF3805AUIRF3805SAUIRF3805LFeatures HEXFET Power MOSFETl Advanced Process TechnologyV(BR)DSS55VDl Ultra Low On-ResistanceRDS(on) typ.2.6ml 175C Operating Temperaturel Fast Switching max. 3.3mGl Repetitive Avalanche Allowed up to TjmaxID (Silicon Limited)210A l Lead-Free, RoHS CompliantSl Automotive Qualified * ID
auirf3805s-7p auirf3805l-7p.pdf
AUIRF3805S-7P AUTOMOTIVE GRADE AUIRF3805L-7P Features VDSS 55V Advanced Process Technology RDS(on) typ. 2.0m Ultra Low On-Resistance 175C Operating Temperature max. 2.6m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID 240A Lead-Free, RoHS Compliant Automotive Qualified * Description Specifically designed
auirf3805 auirf3805s auirf3805l.pdf
AUIRF3805 AUIRF3805S AUTOMOTIVE GRADE AUIRF3805L Features VDSS 55V Advanced Process Technology RDS(on) typ. 2.6m Ultra Low On-Resistance max. 3.3m 175C Operating Temperature ID (Silicon Limited) 210A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 160A Lead-Free, RoHS Compliant Automotiv
irf3805s-7ppbf irf3805l-7ppbf.pdf
IRF3805S-7PPbFIRF3805L-7PPbFFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 55Vl 175C Operating Temperaturel Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 2.6mGl Lead-FreeSID = 160ADescriptionS (Pin 2, 3, 5, 6, 7)G (Pin 1) This HEXFET Power MOSFET utilizes the latestprocessing techni
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918