IRF3808S Todos los transistores

 ..1. Size:161K  international rectifier
 irf3808s.pdf

PD - 94338A IRF3808S AUTOMOTIVE MOSFET IRF3808L Typical Applications HEXFET Power MOSFET Integrated Starter Alternator 42 Volts Automotive Electrical Systems D Benefits VDSS = 75V Advanced Process Technology Ultra Low On-Resistance RDS(on) = 0.007 Dynamic dv/dt Rating G 175 C Operating Temperature ID = 106AV Fast Switching S Repetitive Avalanche Allowed up to T

 ..2. Size:309K  international rectifier
 irf3808lpbf irf3808spbf.pdf

PD - 95467A IRF3808SPbF IRF3808LPbF Typical Applications HEXFET Power MOSFET Industrial Motor Drive D VDSS = 75V Benefits Advanced Process Technology Ultra Low On-Resistance RDS(on) = 0.007 G Dynamic dv/dt Rating 175 C Operating Temperature ID = 106A Fast Switching S Repetitive Avalanche Allowed up to Tjmax Lead-Free Description This Advanced Planar Stripe H

 ..3. Size:258K  inchange semiconductor
 irf3808s.pdf

Isc N-Channel MOSFET Transistor IRF3808S FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

 0.1. Size:220K  international rectifier
 auirf3808s.pdf

PD - 97698A AUTOMOTIVE GRADE AUIRF3808S HEXFET Power MOSFET Features Advanced Planar Technology D Low On-Resistance VDSS 75V Dynamic dV/dT Rating RDS(on) typ. 5.9m 175 C Operating Temperature G max. 7.0m Fast Switching S Fully Avalanche Rated ID 106A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive

 7.1. Size:246K  international rectifier
 irf3808pbf.pdf

PD - 94972A IRF3808PbF HEXFET Power MOSFET Typical Applications Industrial Motor Drive D VDSS = 75V Benefits Advanced Process Technology Ultra Low On-Resistance RDS(on) = 0.007 G Dynamic dv/dt Rating 175 C Operating Temperature ID = 140A Fast Switching S Repetitive Avalanche Allowed up to Tjmax Lead-Free Description This Advanced Planar Stripe HEXFET Power

 7.2. Size:221K  international rectifier
 auirf3808.pdf

PD - 97697A AUTOMOTIVE GRADE AUIRF3808 HEXFET Power MOSFET Features l Advanced Planar Technology D V(BR)DSS 75V l Low On-Resistance RDS(on) typ. 5.9m l Dynamic dv/dt Rating G l 175 C Operating Temperature max 7.0m l Fast Switching S ID 140A l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified* D

 7.3. Size:131K  international rectifier
 irf3808.pdf

PD - 94291B IRF3808 AUTOMOTIVE MOSFET HEXFET Power MOSFET Typical Applications Integrated Starter Alternator D 42 Volts Automotive Electrical Systems VDSS = 75V Benefits Advanced Process Technology RDS(on) = 0.007 Ultra Low On-Resistance G Dynamic dv/dt Rating 175 C Operating Temperature ID = 140AV S Fast Switching Repetitive Avalanche Allowed up to Tjmax Descr

 7.4. Size:165K  international rectifier
 irf3808l.pdf

PD - 94338A IRF3808S AUTOMOTIVE MOSFET IRF3808L Typical Applications HEXFET Power MOSFET Integrated Starter Alternator 42 Volts Automotive Electrical Systems D Benefits VDSS = 75V Advanced Process Technology Ultra Low On-Resistance RDS(on) = 0.007 Dynamic dv/dt Rating G 175 C Operating Temperature ID = 106AV Fast Switching S Repetitive Avalanche Allowed up to T

 7.5. Size:245K  inchange semiconductor
 irf3808.pdf

isc N-Channel MOSFET Transistor IRF3808 IIRF3808 FEATURES Static drain-source on-resistance RDS(on) 7.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM

 7.6. Size:256K  inchange semiconductor
 irf3808l.pdf

Isc N-Channel MOSFET Transistor IRF3808L FEATURES With To-262 package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 75