All MOSFET. IRF3808S Datasheet

 

IRF3808S Datasheet and Replacement


   Type Designator: IRF3808S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 106 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 140 nS
   Cossⓘ - Output Capacitance: 890 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: TO263
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IRF3808S Datasheet (PDF)

 ..1. Size:161K  international rectifier
irf3808s.pdf pdf_icon

IRF3808S

PD - 94338AIRF3808SAUTOMOTIVE MOSFETIRF3808LTypical ApplicationsHEXFET Power MOSFET Integrated Starter Alternator 42 Volts Automotive Electrical SystemsDBenefitsVDSS = 75V Advanced Process Technology Ultra Low On-ResistanceRDS(on) = 0.007 Dynamic dv/dt RatingG 175C Operating TemperatureID = 106AV Fast SwitchingS Repetitive Avalanche Allowed up to T

 ..2. Size:309K  international rectifier
irf3808lpbf irf3808spbf.pdf pdf_icon

IRF3808S

PD - 95467AIRF3808SPbFIRF3808LPbFTypical Applications HEXFET Power MOSFET Industrial Motor DriveDVDSS = 75VBenefits Advanced Process Technology Ultra Low On-ResistanceRDS(on) = 0.007G Dynamic dv/dt Rating 175C Operating TemperatureID = 106A Fast SwitchingS Repetitive Avalanche Allowed up to Tjmax Lead-FreeDescriptionThis Advanced Planar Stripe H

 ..3. Size:258K  inchange semiconductor
irf3808s.pdf pdf_icon

IRF3808S

Isc N-Channel MOSFET Transistor IRF3808SFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

 0.1. Size:220K  international rectifier
auirf3808s.pdf pdf_icon

IRF3808S

PD - 97698AAUTOMOTIVE GRADEAUIRF3808SHEXFET Power MOSFETFeatures Advanced Planar TechnologyD Low On-Resistance VDSS 75V Dynamic dV/dT RatingRDS(on) typ.5.9m 175C Operating TemperatureG max. 7.0m Fast SwitchingS Fully Avalanche Rated ID106A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: ATP212 | 2SK2424 | FQD6N25TM | IXTB30N100L | WSD3042DN56 | IRF7478Q | BSC010NE2LSI

Keywords - IRF3808S MOSFET datasheet

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