BF909 Todos los transistores

 

BF909 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BF909
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 7 V
   |Id|ⓘ - Corriente continua de drenaje: 0.04 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 3.6 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 100 Ohm
   Paquete / Cubierta: SOT143
     - Selección de transistores por parámetros

 

BF909 Datasheet (PDF)

 ..1. Size:118K  philips
bf909 bf909r 01.pdf pdf_icon

BF909

DISCRETE SEMICONDUCTORSDATA SHEETBF909; BF909RN-channel dual gate MOS-FETs1995 Apr 25Product specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Product specificationN-channel dual gate MOS-FETs BF909; BF909Rtransistor consists of an amplifier MOS-FET with sourceFEATURESand substrate interconnected and an internal bias circu

 ..2. Size:154K  philips
bf909 bf909r 1.pdf pdf_icon

BF909

DISCRETE SEMICONDUCTORSDATA SHEETBF909; BF909RN-channel dual gate MOS-FETs1995 Apr 25Product specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Product specificationN-channel dual gate MOS-FETs BF909; BF909Rtransistor consists of an amplifier MOS-FET with sourceFEATURESand substrate interconnected and an internal bias circu

 ..3. Size:320K  philips
bf909 r.pdf pdf_icon

BF909

BF909; BF909RN-channel dual gate MOS-FETsRev. 02 19 November 2007 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new links asshown be

 0.1. Size:137K  philips
bf909wr.pdf pdf_icon

BF909

DISCRETE SEMICONDUCTORSDATA SHEETBF909WRN-channel dual-gate MOS-FET1995 Apr 25Product specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Product specificationN-channel dual-gate MOS-FET BF909WRFEATURES PINNING Specially designed for use at 5 V supply voltagePIN SYMBOL DESCRIPTION Short channel transistor with high f

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History: IRFB4310ZGPBF | DMN2170U | FHP100N03C | FQB10N60CTM | AOB66919L | RW1E025RP | CED95P04

 

 
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