Справочник MOSFET. BF909

 

BF909 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BF909
   Маркировка: M28
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 7 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.04 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Cossⓘ - Выходная емкость: 3.6 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 100 Ohm
   Тип корпуса: SOT143

 Аналог (замена) для BF909

 

 

BF909 Datasheet (PDF)

 ..1. Size:118K  philips
 bf909 bf909r 01.pdf

BF909 BF909

DISCRETE SEMICONDUCTORSDATA SHEETBF909; BF909RN-channel dual gate MOS-FETs1995 Apr 25Product specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Product specificationN-channel dual gate MOS-FETs BF909; BF909Rtransistor consists of an amplifier MOS-FET with sourceFEATURESand substrate interconnected and an internal bias circu

 ..2. Size:154K  philips
 bf909 bf909r 1.pdf

BF909 BF909

DISCRETE SEMICONDUCTORSDATA SHEETBF909; BF909RN-channel dual gate MOS-FETs1995 Apr 25Product specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Product specificationN-channel dual gate MOS-FETs BF909; BF909Rtransistor consists of an amplifier MOS-FET with sourceFEATURESand substrate interconnected and an internal bias circu

 ..3. Size:320K  philips
 bf909 r.pdf

BF909 BF909

BF909; BF909RN-channel dual gate MOS-FETsRev. 02 19 November 2007 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new links asshown be

 0.1. Size:137K  philips
 bf909wr.pdf

BF909 BF909

DISCRETE SEMICONDUCTORSDATA SHEETBF909WRN-channel dual-gate MOS-FET1995 Apr 25Product specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Product specificationN-channel dual-gate MOS-FET BF909WRFEATURES PINNING Specially designed for use at 5 V supply voltagePIN SYMBOL DESCRIPTION Short channel transistor with high f

 0.2. Size:132K  philips
 bf909wr 2.pdf

BF909 BF909

DISCRETE SEMICONDUCTORSDATA SHEETBF909WRN-channel dual-gate MOS-FET1997 Sep 05Product specificationSupersedes data of 1995 Apr 25File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel dual-gate MOS-FET BF909WRFEATURES PINNING Specially designed for use at 5 V supply voltagePIN SYMBOL DESCRIPTION Short channel transistor wit

Другие MOSFET... BF904 , BF904A , BF904R , BF904WR , BF905 , BF908 , BF908R , BF908WR , AO3400 , BF909A , BF909R , BF909WR , BF910 , BF960 , BF960S , BF961 , BF963 .

 

 
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