BF909. Аналоги и основные параметры

Наименование производителя: BF909

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 0.2 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 7 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.04 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

Cossⓘ - Выходная емкость: 3.6 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 100 Ohm

Тип корпуса: SOT143

Аналог (замена) для BF909

- подборⓘ MOSFET транзистора по параметрам

 

BF909 даташит

 ..1. Size:118K  philips
 bf909 bf909r 01.pdf pdf_icon

BF909

DISCRETE SEMICONDUCTORS DATA SHEET BF909; BF909R N-channel dual gate MOS-FETs 1995 Apr 25 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Philips Semiconductors Product specification N-channel dual gate MOS-FETs BF909; BF909R transistor consists of an amplifier MOS-FET with source FEATURES and substrate interconnected and an internal bias circu

 ..2. Size:154K  philips
 bf909 bf909r 1.pdf pdf_icon

BF909

DISCRETE SEMICONDUCTORS DATA SHEET BF909; BF909R N-channel dual gate MOS-FETs 1995 Apr 25 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Philips Semiconductors Product specification N-channel dual gate MOS-FETs BF909; BF909R transistor consists of an amplifier MOS-FET with source FEATURES and substrate interconnected and an internal bias circu

 ..3. Size:320K  philips
 bf909 r.pdf pdf_icon

BF909

BF909; BF909R N-channel dual gate MOS-FETs Rev. 02 19 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown be

 0.1. Size:137K  philips
 bf909wr.pdf pdf_icon

BF909

DISCRETE SEMICONDUCTORS DATA SHEET BF909WR N-channel dual-gate MOS-FET 1995 Apr 25 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF909WR FEATURES PINNING Specially designed for use at 5 V supply voltage PIN SYMBOL DESCRIPTION Short channel transistor with high f

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... BF904, BF904A, BF904R, BF904WR, BF905, BF908, BF908R, BF908WR, AO3407, BF909A, BF909R, BF909WR, BF910, BF960, BF960S, BF961, BF963