IRF6811S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRF6811S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 19 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.1 V
   Qgⓘ - Carga de la puerta: 11 nC
   trⓘ - Tiempo de subida: 19 nS
   Cossⓘ - Capacitancia de salida: 460 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0037 Ohm
   Paquete / Cubierta: DIRECTFET

Búsqueda de reemplazo de MOSFET IRF6811S

IRF6811S Datasheet (PDF)

..1. Size:253K international rectifier
irf6811spbf.pdf

PD-97634IRF6811SPbFIRF6811STRPbFDirectFETplus Power MOSFET Typical values (unless otherwise specified)l RoHS Compliant and Halogen Free VDSS VGS RDS(on) RDS(on) l Low Profile (

8.1. Size:277K international rectifier
irf6810spbf.pdf

PD -96393IRF6810STRPbFIRF6810STR1PbFDirectFETplus Power MOSFET l RoHS Compliant and Halogen Free Typical values (unless otherwise specified)l Low Profile (

9.1. Size:243K international rectifier
irf6898mpbf.pdf

IRF6898MPbFIRF6898MTRPbF HEXFET Power MOSFET plus Schottky Diode Typical values (unless otherwise specified)l RoHs Compliant Containing No Lead and Bromide VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diodel Low Profile (

9.2. Size:248K international rectifier
irf6894mpbf.pdf

PD - 97633AIRF6894MPbFIRF6894MTRPbFDirectFETplus MOSFET with Schottky Diode l RoHs Compliant Containing No Lead and Bromide Typical values (unless otherwise specified)l Integrated Monolithic Schottky DiodeVDSS VGS RDS(on) RDS(on) l Low Profile (

9.3. Size:215K international rectifier
irf6893m.pdf

PD - 97761IRF6893MPbFIRF6893MTRPbFDirectFETplus MOSFET with Schottky Diode l RoHs Compliant Containing No Lead and Bromide Typical values (unless otherwise specified)l Integrated Monolithic Schottky DiodeVDSS VGS RDS(on) RDS(on) l Low Profile (

9.4. Size:248K international rectifier
irf6894m.pdf

9.5. Size:233K international rectifier
irf6892s.pdf

PD - 97770IRF6892STRPbFIRF6892STR1PbFDirectFETplus MOSFET with Schottky Diode l RoHS Compliant and Halogen Free Typical values (unless otherwise specified)l Low Profile (

9.6. Size:275K international rectifier
irf6802sd.pdf

IRF6802SDPbFIRF6802SDTRPbFDirectFETplus Power MOSFET Typical values (unless otherwise specified)l RoHs Compliant Containing No Lead and Bromide VDSS VGS RDS(on) RDS(on) l Low Profile (

9.7. Size:215K infineon
irf6893mpbf irf6893mtrpbf.pdf

9.8. Size:502K infineon
irf6898mpbf irf6898mtrpbf.pdf

IRF6898MPbF IRF6898MTRPbF HEXFET Power MOSFET plus Schottky Diode Typical values (unless otherwise specified) RoHs Compliant Containing No Lead and Bromide Integrated Monolithic Schottky Diode VDSS VGS RDS(on) RDS(on) Low Profile (

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: STK4N25

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