IRF6811S Datasheet. Specs and Replacement
Type Designator: IRF6811S 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id| ⓘ - Maximum Drain Current: 19 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 460 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm
Package: DIRECTFET
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IRF6811S substitution
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IRF6811S datasheet
irf6811spbf.pdf
PD-97634 IRF6811SPbF IRF6811STRPbF DirectFET plus Power MOSFET Typical values (unless otherwise specified) l RoHS Compliant and Halogen Free VDSS VGS RDS(on) RDS(on) l Low Profile (... See More ⇒
irf6810spbf.pdf
PD -96393 IRF6810STRPbF IRF6810STR1PbF DirectFET plus Power MOSFET l RoHS Compliant and Halogen Free Typical values (unless otherwise specified) l Low Profile (... See More ⇒
irf6898mpbf.pdf
IRF6898MPbF IRF6898MTRPbF HEXFET Power MOSFET plus Schottky Diode Typical values (unless otherwise specified) l RoHs Compliant Containing No Lead and Bromide VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode l Low Profile (... See More ⇒
irf6894mpbf.pdf
PD - 97633A IRF6894MPbF IRF6894MTRPbF DirectFET plus MOSFET with Schottky Diode l RoHs Compliant Containing No Lead and Bromide Typical values (unless otherwise specified) l Integrated Monolithic Schottky Diode VDSS VGS RDS(on) RDS(on) l Low Profile (... See More ⇒
Detailed specifications: IRF6729M, IRF6775M, IRF6785M, IRF6794M, IRF6795M, IRF6797M, IRF6798M, IRF6810S, 8N60, IRF6894M, IRF6898M, IRF7353D2, IRF7402, IRF7413Q, IRF7413Z, IRF7450, IRF7451
Keywords - IRF6811S MOSFET specs
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