All MOSFET. IRF6811S Datasheet

 

IRF6811S Datasheet and Replacement


   Type Designator: IRF6811S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id|ⓘ - Maximum Drain Current: 19 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 460 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm
   Package: DIRECTFET
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IRF6811S Datasheet (PDF)

 ..1. Size:253K  international rectifier
 irf6811spbf.pdf pdf_icon

IRF6811S

PD-97634IRF6811SPbFIRF6811STRPbFDirectFETplus Power MOSFET Typical values (unless otherwise specified)l RoHS Compliant and Halogen Free VDSS VGS RDS(on) RDS(on) l Low Profile (

 8.1. Size:277K  international rectifier
 irf6810spbf.pdf pdf_icon

IRF6811S

PD -96393IRF6810STRPbFIRF6810STR1PbFDirectFETplus Power MOSFET l RoHS Compliant and Halogen Free Typical values (unless otherwise specified)l Low Profile (

 9.1. Size:243K  international rectifier
 irf6898mpbf.pdf pdf_icon

IRF6811S

IRF6898MPbFIRF6898MTRPbF HEXFET Power MOSFET plus Schottky Diode Typical values (unless otherwise specified)l RoHs Compliant Containing No Lead and Bromide VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diodel Low Profile (

 9.2. Size:248K  international rectifier
 irf6894mpbf.pdf pdf_icon

IRF6811S

PD - 97633AIRF6894MPbFIRF6894MTRPbFDirectFETplus MOSFET with Schottky Diode l RoHs Compliant Containing No Lead and Bromide Typical values (unless otherwise specified)l Integrated Monolithic Schottky DiodeVDSS VGS RDS(on) RDS(on) l Low Profile (

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History: S70N08RP | SVGP20110NSTR | RU6888S | MXP4004AT | BUK444-800 | IRF3805S-7P | MEE42942-G

Keywords - IRF6811S MOSFET datasheet

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