IRF7353D2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRF7353D2
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Qgⓘ - Carga de la puerta: 22 nC
   trⓘ - Tiempo de subida: 8.9 nS
   Cossⓘ - Capacitancia de salida: 320 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.029 Ohm
   Paquete / Cubierta: SO8

Búsqueda de reemplazo de MOSFET IRF7353D2

IRF7353D2 Datasheet (PDF)

..1. Size:112K international rectifier
irf7353d2.pdf

PD- 93809IRF7353D2 FETKY MOSFET / Schottky Diode Co-Pack HEXFET Power MOSFET and1 8A KSchottky DiodeVDSS = 30V2 7 Ideal For Buck Regulator Applications A K N-Channel HEXFET power MOSFET3 6 RDS(on) = 0.029S D Low VF Schottky Rectifier45G D Generation 5 TechnologySchottky VF = 0.52V SO-8 FootprintTop ViewDescriptionThe FETKY

..2. Size:122K international rectifier
irf7353d2pbf.pdf

PD- 95215AIRF7353D2PbFFETKY MOSFET / Schottky Diodel Co-Pack HEXFET Power MOSFET andSchottky Diode1 8A Kl Ideal For Buck Regulator ApplicationsVDSS = 30V2 7l N-Channel HEXFET power MOSFETA Kl Low VF Schottky Rectifier3 6 RDS(on) = 0.029S Dl Generation 5 Technology45G Dl SO-8 FootprintSchottky VF = 0.52Vl Lead-FreeTop ViewDescriptionThe FETK

6.1. Size:134K international rectifier
irf7353d1pbf.pdf

PD - 95251AIRF7353D1PbFFETKY MOSFET / Schottky Diodel Co-packaged HEXFET Power MOSFETand Schottky Diode1 8A KVDSS = 30Vl Ideal For Buck Regulator Applications2 7A Kl N-Channel HEXFET3 6 RDS(on) = 0.029l Low VF Schottky RectifierS Dl Generation 5 Technology45G Dl SO-8 Footprint Schottky Vf = 0.39Vl Lead-FreeTop ViewDescriptionThe FETKY family

6.2. Size:170K international rectifier
irf7353d1.pdf

PD- 91802AIRF7353D1 FETKY MOSFET / Schottky Diode Co-packaged HEXFET Power MOSFET1 8A Kand Schottky DiodeVDSS = 30V2 7 Ideal For Buck Regulator ApplicationsA K N-Channel HEXFET3 6 RDS(on) = 0.029S D Low VF Schottky Rectifier45G D Generation 5 TechnologySchottky Vf = 0.39V SO-8 FootprintTop ViewDescriptionThe FETKY family

8.1. Size:276K international rectifier
irf7351pbf.pdf

PD - 97436IRF7351PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQg (typ.)l Synchronous Rectifier MOSFET for17.8m@VGS = 10V60V 24nCIsolated DC-DC Convertersl Low Power Motor Drive Systems1 8S1 D1Benefits2 7G1 D1l Ultra-Low Gate Impedance3 6S2 D2l Fully Characterized Avalanche Voltage45G2 D2and Currentl 20V VGS Max. Gate RatingSO-8Top

8.2. Size:238K international rectifier
irf7350.pdf

PD - 94226BIRF7350HEXFET Power MOSFET Ultra Low On-ResistanceN-CHANNEL MOSFETN-Ch P-Ch1 8S1 D1 Dual N and P Channel MOSFET2 7 Surface MountG1 D1VDSS 100V -100V Available in Tape and Reel3 6S2 D24 5G2 D2P-CHANNEL MOSFETRDS(on) 0.21 0.48Top ViewDescriptionThese dual N and P channel HEXFET power MOSFETs from InternationalRectifier utilize

8.3. Size:282K infineon
irf7351pbf.pdf

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