IRF7353D2 Specs and Replacement
Type Designator: IRF7353D2
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8.9 nS
Cossⓘ - Output Capacitance: 320 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
Package: SO8
IRF7353D2 substitution
- MOSFET ⓘ Cross-Reference Search
IRF7353D2 datasheet
irf7353d2pbf.pdf
PD- 95215A IRF7353D2PbF FETKY MOSFET / Schottky Diode l Co-Pack HEXFET Power MOSFET and Schottky Diode 1 8 A K l Ideal For Buck Regulator Applications VDSS = 30V 2 7 l N-Channel HEXFET power MOSFET A K l Low VF Schottky Rectifier 3 6 RDS(on) = 0.029 S D l Generation 5 Technology 4 5 G D l SO-8 Footprint Schottky VF = 0.52V l Lead-Free Top View Description The FETK... See More ⇒
irf7353d1pbf.pdf
PD - 95251A IRF7353D1PbF FETKY MOSFET / Schottky Diode l Co-packaged HEXFET Power MOSFET and Schottky Diode 1 8 A K VDSS = 30V l Ideal For Buck Regulator Applications 2 7 A K l N-Channel HEXFET 3 6 RDS(on) = 0.029 l Low VF Schottky Rectifier S D l Generation 5 Technology 4 5 G D l SO-8 Footprint Schottky Vf = 0.39V l Lead-Free Top View Description The FETKY family ... See More ⇒
irf7353d1.pdf
PD- 91802A IRF7353D1 FETKY MOSFET / Schottky Diode Co-packaged HEXFET Power MOSFET 1 8 A K and Schottky Diode VDSS = 30V 2 7 Ideal For Buck Regulator Applications A K N-Channel HEXFET 3 6 RDS(on) = 0.029 S D Low VF Schottky Rectifier 4 5 G D Generation 5 Technology Schottky Vf = 0.39V SO-8 Footprint Top View Description The FETKY family ... See More ⇒
Detailed specifications: IRF6794M , IRF6795M , IRF6797M , IRF6798M , IRF6810S , IRF6811S , IRF6894M , IRF6898M , K2611 , IRF7402 , IRF7413Q , IRF7413Z , IRF7450 , IRF7451 , IRF7452 , IRF7452Q , IRF7455 .
Keywords - IRF7353D2 MOSFET specs
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