IRF7488 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF7488

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 270 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.029 Ohm

Encapsulados: SO8

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IRF7488 datasheet

 ..1. Size:141K  international rectifier
 irf7488.pdf pdf_icon

IRF7488

PD - 94507 IRF7488 HEXFET Power MOSFET Applications l High frequency DC-DC converters VDSS RDS(on) max Qg 80V 29mW@VGS=10V 38nC Benefits l Low Gate-to-Drain Charge to Reduce A A Switching Losses 1 8 S D l Fully Characterized Capacitance Including 2 7 S D Effective COSS to Simplify Design, (See 3 6 S D App. Note AN1001) 4 5 l Fully Characterized Avalanche Voltage G D and

 ..2. Size:151K  international rectifier
 irf7488pbf.pdf pdf_icon

IRF7488

PD - 95283 IRF7488PbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg l High frequency DC-DC converters 80V 29mW@VGS=10V 38nC l Lead-Free A Benefits A 1 8 S D l Low Gate-to-Drain Charge to Reduce 2 7 S D Switching Losses 3 6 S D l Fully Characterized Capacitance Including 4 5 G D Effective COSS to Simplify Design, (See App. Note AN1001) SO-8 Top View l Fully Cha

 8.1. Size:498K  international rectifier
 irf7480m.pdf pdf_icon

IRF7488

StrongIRFET IRF7480MTRPbF DirectFET N-Channel Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications RDS(on) typ. Battery powered circuits 0.95m Half-bridge and full-bridge topologies max 1.20m Synchronous rectifier applications Resonant mode power supplies ID (Silic

 8.2. Size:231K  international rectifier
 irf7484pbf.pdf pdf_icon

IRF7488

PD - 95281A IRF7484PbF Typical Applications HEXFET Power MOSFET Industrial Motor Drive VDSS RDS(on) max (mW) ID 40V 10@VGS = 7.0V 14A Benefits l Advanced Process Technology l Ultra Low On-Resistance l Fast Switching l Repetitive Avalanche Allowed up to Tjmax. A A 1 8 l Lead-Free S D 2 7 S D Description 3 6 S D This Stripe Planar design of HEXFET Power 4 5 MOSFETs

MOSTRAR MÁS

Otros transistores... IRF7468, IRF7469, IRF7470, IRF7473, IRF7475, IRF7476, IRF7478, IRF7478Q, IRLZ44N, IRF7490, IRF7492, IRF7493, IRF7494, IRF7495, IRF7607, IRF7665S2, IRF7805