IRF7488 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRF7488
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 38 nC
   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 270 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.029 Ohm
   Paquete / Cubierta: SO8

Búsqueda de reemplazo de MOSFET IRF7488

IRF7488 Datasheet (PDF)

..1. Size:141K international rectifier
irf7488.pdf

PD - 94507IRF7488HEXFET Power MOSFETApplicationsl High frequency DC-DC converters VDSS RDS(on) max Qg80V 29mW@VGS=10V 38nCBenefitsl Low Gate-to-Drain Charge to ReduceAASwitching Losses1 8S Dl Fully Characterized Capacitance Including2 7S DEffective COSS to Simplify Design, (See3 6S DApp. Note AN1001)4 5l Fully Characterized Avalanche VoltageG Dand

..2. Size:151K infineon
irf7488pbf.pdf

PD - 95283IRF7488PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max Qgl High frequency DC-DC converters80V 29mW@VGS=10V 38nCl Lead-FreeABenefitsA1 8S Dl Low Gate-to-Drain Charge to Reduce2 7S DSwitching Losses3 6S Dl Fully Characterized Capacitance Including4 5G DEffective COSS to Simplify Design, (SeeApp. Note AN1001)SO-8Top Viewl Fully Cha

8.1. Size:498K international rectifier
irf7480m.pdf

StrongIRFET IRF7480MTRPbF DirectFET N-Channel Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications RDS(on) typ. Battery powered circuits 0.95m Half-bridge and full-bridge topologies max 1.20m Synchronous rectifier applications Resonant mode power supplies ID (Silic

8.2. Size:231K international rectifier
irf7484pbf.pdf

PD - 95281AIRF7484PbFTypical ApplicationsHEXFET Power MOSFET Industrial Motor DriveVDSS RDS(on) max (mW) ID 40V 10@VGS = 7.0V 14ABenefitsl Advanced Process Technologyl Ultra Low On-Resistancel Fast Switchingl Repetitive Avalanche Allowed up to Tjmax.AA1 8l Lead-FreeS D2 7S DDescription3 6S DThis Stripe Planar design of HEXFET Power45MOSFETs

8.3. Size:180K international rectifier
irf7484.pdf

PD - 94446AIRF7484Typical Applications Relay replacement HEXFET Power MOSFET Anti-lock Braking System Air BagVDSS RDS(on) max (mW) IDBenefits 40V 10@VGS = 7.0V 14A Advanced Process Technology Ultra Low On-Resistance Fast Switching Repetitive Avalanche Allowed up to TjmaxAA1 8S D2 7S DDescription3 6S DSpecifically designed for Automotive applications

8.4. Size:495K international rectifier
irf7483m.pdf

StrongIRFET IRF7483MTRPbF DirectFET N-Channel Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications RDS(on) typ. Battery powered circuits 1.7m Half-bridge and full-bridge topologies max 2.3m Synchronous rectifier applications Resonant mode power supplies ID (Silicon

8.5. Size:224K international rectifier
auirf7484q.pdf

AUTOMOTIVE GRADE PD - 97757AUIRF7484QFeaturesHEXFET Power MOSFETl Advanced Planar TechnologyAA1 8l Low On-Resistance S D V(BR)DSS40V2 7S Dl 150C Operating Temperature3 6S D RDS(on) max.10ml Fast Switching4 5G Dl Fully Avalanche RatedID14ATop Viewl Repetitive Avalanche Allowedup to Tjmaxl Lead-Free, RoHS Compliantl Automotive Qualified*

8.6. Size:248K international rectifier
irf7484q.pdf

PD - 94803AAUTOMOTIVE MOSFETIRF7484QTypical Applications Relay replacement HEXFET Power MOSFET Anti-lock Braking System Air BagVDSS RDS(on) max (mW) IDBenefits 40V 10@VGS = 7.0V 14A Advanced Process Technology Ultra Low On-Resistance Fast Switching Repetitive Avalanche Allowed up to TjmaxAA1 8S D2 7S DDescription3 6S DSpecifically designed for Aut

8.7. Size:498K infineon
irf7480mtrpbf.pdf

8.8. Size:416K infineon
auirf7484q.pdf

AUTOMOTIVE GRADE AUIRF7484Q HEXFET Power MOSFET Features Advanced Planar Technology AVDSS A1 8 Low On-Resistance 40V S D2 7S D 150C Operating Temperature RDS(on) max. 3 6S D Fast Switching 10m4 5G D Fully Avalanche Rated ID Top View Repetitive Avalanche Allowed up to Tjmax 14A Lead-Free, RoHS Compliant Auto

8.9. Size:510K infineon
irf7483mtrpbf.pdf

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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