All MOSFET. IRF7488 Datasheet

 

IRF7488 Datasheet and Replacement


   Type Designator: IRF7488
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 6.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 38 nC
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 270 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
   Package: SO8
 

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IRF7488 Datasheet (PDF)

 ..1. Size:141K  international rectifier
irf7488.pdf pdf_icon

IRF7488

PD - 94507IRF7488HEXFET Power MOSFETApplicationsl High frequency DC-DC converters VDSS RDS(on) max Qg80V 29mW@VGS=10V 38nCBenefitsl Low Gate-to-Drain Charge to ReduceAASwitching Losses1 8S Dl Fully Characterized Capacitance Including2 7S DEffective COSS to Simplify Design, (See3 6S DApp. Note AN1001)4 5l Fully Characterized Avalanche VoltageG Dand

 ..2. Size:151K  international rectifier
irf7488pbf.pdf pdf_icon

IRF7488

PD - 95283IRF7488PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max Qgl High frequency DC-DC converters80V 29mW@VGS=10V 38nCl Lead-FreeABenefitsA1 8S Dl Low Gate-to-Drain Charge to Reduce2 7S DSwitching Losses3 6S Dl Fully Characterized Capacitance Including4 5G DEffective COSS to Simplify Design, (SeeApp. Note AN1001)SO-8Top Viewl Fully Cha

 8.1. Size:498K  international rectifier
irf7480m.pdf pdf_icon

IRF7488

StrongIRFET IRF7480MTRPbF DirectFET N-Channel Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications RDS(on) typ. Battery powered circuits 0.95m Half-bridge and full-bridge topologies max 1.20m Synchronous rectifier applications Resonant mode power supplies ID (Silic

 8.2. Size:231K  international rectifier
irf7484pbf.pdf pdf_icon

IRF7488

PD - 95281AIRF7484PbFTypical ApplicationsHEXFET Power MOSFET Industrial Motor DriveVDSS RDS(on) max (mW) ID 40V 10@VGS = 7.0V 14ABenefitsl Advanced Process Technologyl Ultra Low On-Resistancel Fast Switchingl Repetitive Avalanche Allowed up to Tjmax.AA1 8l Lead-FreeS D2 7S DDescription3 6S DThis Stripe Planar design of HEXFET Power45MOSFETs

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

Keywords - IRF7488 MOSFET datasheet

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