IRF7807VD2 Todos los transistores

 

IRF7807VD2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRF7807VD2
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 1.2 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
   Paquete / Cubierta: SO8
 

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IRF7807VD2 Datasheet (PDF)

 ..1. Size:115K  international rectifier
 irf7807vd2.pdf pdf_icon

IRF7807VD2

PD-94079IRF7807VD2FETKY MOSFET / SCHOTTKY DIODE Co-Pack N-channel HEXFET Power MOSFET1 8and Schottky Diode A/S K/D Ideal for Synchronous Rectifiers in DC-DC 2 7A/S K/DConverters Up to 5A Output3 6A/S K/D Low Conduction Losses4 5 Low Switching LossesG K/DD Low Vf Schottky RectifierTop ViewDescriptionSO-8The FETKY family of Co-Pack H

 5.1. Size:117K  international rectifier
 irf7807vd1.pdf pdf_icon

IRF7807VD2

PD-94078IRF7807VD1FETKY MOSFET / SCHOTTKY DIODE Co-Pack N-channel HEXFET Power MOSFET1 8and Schottky Diode A/S K/D Ideal for Synchronous Rectifiers in DC-DC 2 7A/S K/DConverters Up to 5A Output3 6A/S K/D Low Conduction Losses4 5 Low Switching LossesG K/DD Low Vf Schottky RectifierTop ViewDescriptionSO-8The FETKY family of Co-Pack H

 6.1. Size:213K  international rectifier
 irf7807vtrpbf-1.pdf pdf_icon

IRF7807VD2

IRF7807VTRPbF-1HEXFET Power MOSFETVDS 30 VA1 8S DRDS(on) max 25 m2 7(@V = 4.5V) S DGSQg (typical) 9.5 nC3 6S DID 4 58.3 A G D(@T = 25C)ASO-8Top ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmen

 6.2. Size:159K  international rectifier
 irf7807v.pdf pdf_icon

IRF7807VD2

PD-94108IRF7807V N Channel Application Specific MOSFET Ideal for Mobile DC-DC Converters Low Conduction LossesA Low Switching Losses1 8S D2 7Description S DThis new device employs advanced HEXFET Power3 6S DMOSFET technology to achieve an unprecedented4 5balance of on-resistance and gate charge. TheG Dreduction of conduction and switching losses m

MOSTRAR MÁS

Otros transistores... IRF7805Q , IRF7805Z , IRF7805ZG , IRF7807A , IRF7807D1 , IRF7807D2 , IRF7807V , IRF7807VD1 , 5N60 , IRF7807Z , IRF7809AV , IRF7811AV , IRF7815 , IRF7821 , IRF7828 , IRF7831 , IRF7832 .

 

 
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