IRF7811AV MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF7811AV

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 10.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 21 nS

Cossⓘ - Capacitancia de salida: 723 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm

Encapsulados: SO8

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IRF7811AV datasheet

 ..1. Size:86K  international rectifier
 irf7811av.pdf pdf_icon

IRF7811AV

PD-94009 IRF7811AV IRF7811AV N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses A Low Switching Losses A 1 8 S D Minimizes Parallel MOSFETs for high current applications 2 7 S D 3 6 Description S D This new device employs advanced HEXFET Power 4 5 G D MOSFET technology to achieve an unprecedented balance of

 0.1. Size:822K  cn vbsemi
 irf7811avtr.pdf pdf_icon

IRF7811AV

IRF7811AVTR www.VBsemi.tw N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 12 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch

 7.1. Size:126K  international rectifier
 irf7809 irf7811.pdf pdf_icon

IRF7811AV

PD - 93812 PD - 93813 IRF7809/IRF7811 IRF7809/IRF7811 Provisional Datasheet N-Channel Application-Specific MOSFETs HEXFET Chipset for DC-DC Converters Ideal for CPU Core DC-DC Converters New CopperStrapTM Interconnect for Lower A A Electrical and Thermal Resistance 1 8 S D Low Conduction Losses 2 7 Low Switching Losses S D Minimizes Parallel MOSFETs fo

 7.2. Size:185K  international rectifier
 irf7811w.pdf pdf_icon

IRF7811AV

PD-94031D IRF7811W HEXFET Power MOSFET for DC-DC Converters N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses A 1 8 Low Switching Losses S D 100% Tested for RG 2 7 S D 3 6 S D Description 4 5 G D This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resist

MOSTRAR MÁS

Otros transistores... IRF7807A, IRF7807D1, IRF7807D2, IRF7807V, IRF7807VD1, IRF7807VD2, IRF7807Z, IRF7809AV, IRFP260, IRF7815, IRF7821, IRF7828, IRF7831, IRF7832, IRF7834, IRF7842, IRF7853