All MOSFET. IRF7811AV Datasheet

 

IRF7811AV Datasheet and Replacement


   Type Designator: IRF7811AV
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 723 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: SO8
 

 IRF7811AV substitution

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IRF7811AV Datasheet (PDF)

 ..1. Size:86K  international rectifier
irf7811av.pdf pdf_icon

IRF7811AV

PD-94009IRF7811AVIRF7811AV N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction LossesA Low Switching LossesA1 8S D Minimizes Parallel MOSFETs for high currentapplications2 7S D3 6DescriptionS DThis new device employs advanced HEXFET Power4 5G DMOSFET technology to achieve an unprecedentedbalance of

 0.1. Size:822K  cn vbsemi
irf7811avtr.pdf pdf_icon

IRF7811AV

IRF7811AVTRwww.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch

 7.1. Size:126K  international rectifier
irf7809 irf7811.pdf pdf_icon

IRF7811AV

PD - 93812PD - 93813IRF7809/IRF7811IRF7809/IRF7811Provisional Datasheet N-Channel Application-Specific MOSFETsHEXFET Chipset for DC-DC Converters Ideal for CPU Core DC-DC Converters New CopperStrapTM Interconnect for LowerAAElectrical and Thermal Resistance1 8S D Low Conduction Losses2 7 Low Switching Losses S D Minimizes Parallel MOSFETs fo

 7.2. Size:185K  international rectifier
irf7811w.pdf pdf_icon

IRF7811AV

PD-94031DIRF7811WHEXFET Power MOSFET for DC-DC Converters N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction LossesA1 8 Low Switching LossesS D 100% Tested for RG2 7S D3 6S DDescription4 5G DThis new device employs advanced HEXFET PowerMOSFET technology to achieve an unprecedentedbalance of on-resist

Datasheet: IRF7807A , IRF7807D1 , IRF7807D2 , IRF7807V , IRF7807VD1 , IRF7807VD2 , IRF7807Z , IRF7809AV , 8205A , IRF7815 , IRF7821 , IRF7828 , IRF7831 , IRF7832 , IRF7834 , IRF7842 , IRF7853 .

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