IRF7834 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF7834

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 19 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 14.3 nS

Cossⓘ - Capacitancia de salida: 810 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm

Encapsulados: SO8

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IRF7834 datasheet

 ..1. Size:207K  international rectifier
irf7834.pdf pdf_icon

IRF7834

PD - 94761 IRF7834 HEXFET Power MOSFET Applications VDSS RDS(on) max Qg (typ.) l Synchronous MOSFET for Notebook 4.5m @VGS = 10V 30V 29nC Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems A A 1 8 S D Benefits 2 7 S D l Very Low RDS(on) at 4.5V VGS 3 6 S D l Ultra-Low Gate Impedance 4 5 G D l Fully Characterized Avalanc

 ..2. Size:189K  international rectifier
irf7834pbf.pdf pdf_icon

IRF7834

PD - 95292 IRF7834PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook VDSS RDS(on) max Qg (typ.) Processor Power 4.5m @VGS = 10V 30V 29nC l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems A l Lead-Free A 1 8 S D 2 7 S D Benefits 3 6 S D l Very Low RDS(on) at 4.5V VGS 4 5 G D l Ultra-Low Gate Impedance l Fully Chara

 0.1. Size:865K  cn vbsemi
irf7834trpbf.pdf pdf_icon

IRF7834

IRF7834TRPBF www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.004 at VGS = 10 V 18 30 6.8 nC Optimized for High-Side Synchronous 0.005 at VGS = 4.5 V 16 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switc

 8.1. Size:262K  international rectifier
irf7832pbf.pdf pdf_icon

IRF7834

PD - 95016A IRF7832PbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg l Synchronous MOSFET for Notebook Processor Power 4.0m @VGS = 10V 30V 34nC l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems A A 1 8 S D l Lead-Free 2 7 S D Benefits 3 6 S D l Very Low RDS(on) at 4.5V VGS 4 5 G D l Ultra-Low Gate Impedance SO-8 l Fully Chara

Otros transistores... IRF7807Z, IRF7809AV, IRF7811AV, IRF7815, IRF7821, IRF7828, IRF7831, IRF7832, AON7410, IRF7842, IRF7853, IRF7854, IRF7855, IRF7862, IRF8010, IRF8010L, IRF8010S