IRF7834 MOSFET. Datasheet pdf. Equivalent

   Type Designator: IRF7834
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.25 V
   |Id|ⓘ - Maximum Drain Current: 19 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 29 nC
   trⓘ - Rise Time: 14.3 nS
   Cossⓘ - Output Capacitance: 810 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: SO8

IRF7834 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS

IRF7834 Datasheet (PDF)

..1. Size:207K international rectifier
irf7834.pdf pdf_icon

PD - 94761IRF7834HEXFET Power MOSFETApplicationsVDSS RDS(on) maxQg (typ.)l Synchronous MOSFET for Notebook4.5m:@VGS = 10V30V 29nCProcessor Powerl Synchronous Rectifier MOSFET forIsolated DC-DC Converters inNetworking Systems AA1 8S DBenefits2 7S Dl Very Low RDS(on) at 4.5V VGS3 6S Dl Ultra-Low Gate Impedance45G Dl Fully Characterized Avalanc

..2. Size:189K international rectifier
irf7834pbf.pdf pdf_icon

PD - 95292IRF7834PbFHEXFET Power MOSFETApplicationsl Synchronous MOSFET for NotebookVDSS RDS(on) maxQg (typ.)Processor Power4.5m @VGS = 10V30V 29nCl Synchronous Rectifier MOSFET forIsolated DC-DC Converters inNetworking SystemsAl Lead-FreeA1 8S D2 7S DBenefits3 6S Dl Very Low RDS(on) at 4.5V VGS4 5G Dl Ultra-Low Gate Impedancel Fully Chara

0.1. Size:865K cn vbsemi
irf7834trpbf.pdf pdf_icon

IRF7834TRPBFwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.004 at VGS = 10 V 1830 6.8 nC Optimized for High-Side Synchronous0.005 at VGS = 4.5 V 16Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switc

8.1. Size:262K international rectifier
irf7832pbf.pdf pdf_icon

PD - 95016AIRF7832PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQgl Synchronous MOSFET for NotebookProcessor Power4.0m @VGS = 10V30V 34nCl Synchronous Rectifier MOSFET forIsolated DC-DC Converters inNetworking SystemsAA1 8S Dl Lead-Free2 7S DBenefits3 6S Dl Very Low RDS(on) at 4.5V VGS4 5G Dl Ultra-Low Gate ImpedanceSO-8l Fully Chara

8.2. Size:249K international rectifier
irf7832pbf-1.pdf pdf_icon

IRF7832PbF-1HEXFET Power MOSFETAVDS 30 VA1 8S DRDS(on) max 4.0 m2 7S D(@V = 10V)GS3 6Qg (typical) 34 nCS DID 4 5G D20 A(@T = 25C)ASO-8Top ViewApplicationsl Synchronous MOSFET for Notebook Processor Powerl Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking SystemsFeatures BenefitsIndustry-standard pinout SO-8 Packa

8.3. Size:264K international rectifier
irf7831pbf.pdf pdf_icon

PD - 95134BIRF7831PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQg (typ.)l High Frequency Point-of-Load3.6m:@VGS = 10V30V 40nCSynchronous Buck Converter forApplications in Networking &Computing Systems.AA1 8S DBenefits2 7S Dl Very Low RDS(on) at 4.5V VGS3 6S Dl Ultra-Low Gate Impedance45G Dl Fully Characterized Avalanche Voltage and Cu

8.4. Size:265K international rectifier
irf7832z.pdf pdf_icon

PD - 96975AIRF7832ZHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQgl Synchronous MOSFET for Notebook3.8m @VGS = 10VProcessor Power 30V 30nCl Synchronous Rectifier MOSFET forIsolated DC-DC ConvertersAA1 8S DBenefits2 7S Dl Very Low RDS(on) at 4.5V VGS3 6S Dl Ultra-Low Gate Impedance4 5G Dl Fully Characterized Avalanche Voltageand CurrentSO-8

8.5. Size:264K international rectifier
irf7831.pdf pdf_icon

PD - 94636BIRF7831HEXFET Power MOSFETApplicationsVDSS RDS(on) maxQg (typ.)l High Frequency Point-of-Load3.6m:@VGS = 10V30V 40nCSynchronous Buck Converter forApplications in Networking &Computing Systems.AA1 8S DBenefits2 7S Dl Very Low RDS(on) at 4.5V VGS3 6S Dl Ultra-Low Gate Impedance45G Dl Fully Characterized Avalanche Voltage and Curre

8.6. Size:188K international rectifier
irf7832.pdf pdf_icon

PD - 94594AIRF7832HEXFET Power MOSFETApplicationsVDSS RDS(on) maxQgl Synchronous MOSFET for NotebookProcessor Power4.0m @VGS = 10V30V 34nCl Synchronous Rectifier MOSFET forIsolated DC-DC Converters inNetworking Systems AA1 8S DBenefits2 7S Dl Very Low RDS(on) at 4.5V VGS3 6S Dl Ultra-Low Gate Impedance4 5G Dl Fully Characterized Avalanche Volt

8.7. Size:262K infineon
irf7832pbf.pdf pdf_icon

8.8. Size:264K infineon
irf7831pbf.pdf pdf_icon

8.9. Size:810K cn vbsemi
irf7831tr.pdf pdf_icon

IRF7831TRwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.004 at VGS = 10 V 1830 6.8 nC Optimized for High-Side Synchronous0.005 at VGS = 4.5 V 16Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

LIST

Last Update

All MOSFET. IRF7834 Datasheet

IRF7834 MOSFET. Datasheet pdf. Equivalent

IRF7834 Datasheet (PDF)

LIST

Last Update

AllTransistors(C)