IRF7853 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF7853
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 8.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.9 VQgⓘ - Carga de la puerta: 28 nC
trⓘ - Tiempo de subida: 6.6 nS
Cossⓘ - Capacitancia de salida: 310 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
Paquete / Cubierta: SO8
Búsqueda de reemplazo de MOSFET IRF7853
IRF7853 Datasheet (PDF)
irf7853pbf.pdf
PD - 97069IRF7853PbFHEXFET Power MOSFETApplicationsl Primary Side Switch in Bridge TopologyVDSS RDS(on) max ID in Universal Input (36-75Vin) Isolated18m:@VGS = 10V100V 8.3A DC-DC Convertersl Primary Side Switch in Push-Pull Topology for 18-36Vin Isolated DC-DCAConvertersA1 8S Dl Secondary Side Synchronous2 7Rectification Switch for 15Vout S Dl Suitable
irf7853pbf.pdf
PD - 97069IRF7853PbFHEXFET Power MOSFETApplicationsl Primary Side Switch in Bridge TopologyVDSS RDS(on) max ID in Universal Input (36-75Vin) Isolated18m:@VGS = 10V100V 8.3A DC-DC Convertersl Primary Side Switch in Push-Pull Topology for 18-36Vin Isolated DC-DCAConvertersA1 8S Dl Secondary Side Synchronous2 7Rectification Switch for 15Vout S Dl Suitable
irf7855pbf.pdf
PD - 97173AIRF7855PbFHEXFET Power MOSFETApplicationsl Primary Side Switch in Bridge Topology VDSS RDS(on) max IDin Isolated DC-DC Converters9.4m:@VGS = 10V60V 12Al Primary Side Switch in Push-Pull Topology for 18-36Vin Isolated DC-DCConvertersl Secondary Side SynchronousAARectification Switch for 15Vout1 8S Dl Suitable for 48V Non-Isolated2 7S DSynchron
irf7854pbf.pdf
PD - 97172IRF7854PbFHEXFET Power MOSFETApplicationsl Primary Side Switch in Bridge or two-VDSS RDS(on) max IDswitch forward topologies using 48V13.4m:@VGS = 10V80V 10A(10%) or 36V to 60V ETSI range inputs.l Secondary Side SynchronousRectification Switch for 12VoutAl Suitable for 48V Non-Isolated A1 8S D Synchronous Buck DC-DC Applications2 7S D3 6Bene
irf7855pbf.pdf
PD - 97173AIRF7855PbFHEXFET Power MOSFETApplicationsl Primary Side Switch in Bridge Topology VDSS RDS(on) max IDin Isolated DC-DC Converters9.4m:@VGS = 10V60V 12Al Primary Side Switch in Push-Pull Topology for 18-36Vin Isolated DC-DCConvertersl Secondary Side SynchronousAARectification Switch for 15Vout1 8S Dl Suitable for 48V Non-Isolated2 7S DSynchron
irf7854pbf.pdf
PD - 97172IRF7854PbFHEXFET Power MOSFETApplicationsl Primary Side Switch in Bridge or two-VDSS RDS(on) max IDswitch forward topologies using 48V13.4m:@VGS = 10V80V 10A(10%) or 36V to 60V ETSI range inputs.l Secondary Side SynchronousRectification Switch for 12VoutAl Suitable for 48V Non-Isolated A1 8S D Synchronous Buck DC-DC Applications2 7S D3 6Bene
irf7855.pdf
SMD Type MOSFETN-Channel MOSFETIRF7855 (KRF7855)SOP-8 Features VDS (V) = 60V ID = 12 A (VGS = 10V) RDS(ON) 9.4m (VGS = 10V)A 1.50 0.15A1 8S D2 7S D1 Source 5 Drain6 Drain3 6 2 SourceS D7 Drain3 Source4 8 Drain54 GateG D Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 60V Gate
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: QM1830M3 | SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD