IRFB3006G Todos los transistores

 

IRFB3006G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFB3006G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 375 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 270 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 182 nS
   Cossⓘ - Capacitancia de salida: 1020 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0025 Ohm
   Paquete / Cubierta: TO220AB
 

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IRFB3006G datasheet

 ..1. Size:288K  international rectifier
 irfb3006gpbf.pdf pdf_icon

IRFB3006G

PD - 96238 IRFB3006GPbF HEXFET Power MOSFET Applications D VDSS 60V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 2.1m l Uninterruptible Power Supply l High Speed Power Switching max. 2.5m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 270A ID (Package Limited) 195A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness

 6.1. Size:245K  international rectifier
 irfb3006pbf.pdf pdf_icon

IRFB3006G

IRFB3006PbF HEXFET Power MOSFET Applications D VDSS 60V l High Efficiency Synchronous Rectification RDS(on) typ. 2.1m in SMPS l Uninterruptible Power Supply max. 2.5m l High Speed Power Switching G ID (Silicon Limited) 270A l Hard Switched and High Frequency Circuits ID (Package Limited) 195A S Benefits l Improved Gate, Avalanche and Dynamic D dV/dt Ruggedness l Full

 6.2. Size:246K  inchange semiconductor
 irfb3006.pdf pdf_icon

IRFB3006G

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB3006 IIRFB3006 FEATURES Static drain-source on-resistance RDS(on) 2.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMU

 7.1. Size:457K  international rectifier
 irfb3004pbf irfs3004pbf irfsl3004pbf.pdf pdf_icon

IRFB3006G

PD - 97377 IRFB3004PbF IRFS3004PbF IRFSL3004PbF HEXFET Power MOSFET Applications D l High Efficiency Synchronous Rectification in SMPS VDSS 40V l Uninterruptible Power Supply RDS(on) typ. 1.4m l High Speed Power Switching l Hard Switched and High Frequency Circuits max. 1.75m G ID (Silicon Limited) 340A c Benefits ID (Package Limited) 195A S l Improved Gate,

MOSTRAR MÁS

Otros transistores... IRF8736 , IRF8788 , IRFB23N15D , IRFB23N20D , IRFB260N , IRFB3004 , IRFB3004G , IRFB3006 , P60NF06 , IRFB3077 , IRFB3077G , IRFB31N20D , IRFB3206 , IRFB3206G , IRFB3207 , IRFB3207Z , IRFB3207ZG .

History: AGM025N10C | KI5903DC | KF5N53D | STD10PF06 | RCJ080N25 | MMP60R750PTH | BUZ91A

 

 
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