All MOSFET. IRFB3006G Datasheet

 

IRFB3006G Datasheet and Replacement


   Type Designator: IRFB3006G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 270 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 182 nS
   Cossⓘ - Output Capacitance: 1020 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
   Package: TO220AB
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IRFB3006G Datasheet (PDF)

 ..1. Size:288K  international rectifier
irfb3006gpbf.pdf pdf_icon

IRFB3006G

PD - 96238IRFB3006GPbFHEXFET Power MOSFETApplicationsDVDSS60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.2.1ml Uninterruptible Power Supplyl High Speed Power Switching max. 2.5ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 270A ID (Package Limited) 195A SBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggedness

 6.1. Size:245K  international rectifier
irfb3006pbf.pdf pdf_icon

IRFB3006G

IRFB3006PbFHEXFET Power MOSFETApplicationsDVDSS60Vl High Efficiency Synchronous RectificationRDS(on) typ.2.1m in SMPSl Uninterruptible Power Supply max. 2.5ml High Speed Power SwitchingGID (Silicon Limited) 270A l Hard Switched and High Frequency CircuitsID (Package Limited) 195A SBenefitsl Improved Gate, Avalanche and DynamicDdV/dt Ruggednessl Full

 6.2. Size:246K  inchange semiconductor
irfb3006.pdf pdf_icon

IRFB3006G

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB3006 IIRFB3006FEATURESStatic drain-source on-resistance:RDS(on) 2.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMU

 7.1. Size:457K  international rectifier
irfb3004pbf irfs3004pbf irfsl3004pbf.pdf pdf_icon

IRFB3006G

PD - 97377IRFB3004PbFIRFS3004PbFIRFSL3004PbFHEXFET Power MOSFETApplicationsDl High Efficiency Synchronous Rectification in SMPSVDSS40Vl Uninterruptible Power SupplyRDS(on) typ.1.4ml High Speed Power Switchingl Hard Switched and High Frequency Circuits max. 1.75mGID (Silicon Limited)340AcBenefitsID (Package Limited)195A Sl Improved Gate,

Datasheet: IRF8736 , IRF8788 , IRFB23N15D , IRFB23N20D , IRFB260N , IRFB3004 , IRFB3004G , IRFB3006 , 75N75 , IRFB3077 , IRFB3077G , IRFB31N20D , IRFB3206 , IRFB3206G , IRFB3207 , IRFB3207Z , IRFB3207ZG .

History: STP9NB50FP | TK20V60W | SDF250JAB | SI2308 | SE6003C | HUF75925D3ST | FDU3706

Keywords - IRFB3006G MOSFET datasheet

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