IRFB3306 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFB3306
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 230 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 160 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 85 nC
   trⓘ - Tiempo de subida: 76 nS
   Cossⓘ - Capacitancia de salida: 500 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0042 Ohm
   Paquete / Cubierta: TO220AB

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IRFB3306 Datasheet (PDF)

..1. Size:323K international rectifier
irfb3306pbf irfs3306pbf irfsl3306pbf.pdf

IRFB3306PbFIRFS3306PbFIRFSL3306PbFHEXFET Power MOSFETApplicationsDl High Efficiency Synchronous Rectification in SMPS VDSS60Vl Uninterruptible Power SupplyRDS(on) typ.3.3ml High Speed Power Switching max. 4.2ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 160A BenefitsID (Package Limited)120A Sl Improved Gate, Avalanche and Dynamic dV/

..2. Size:327K infineon
irfb3306pbf irfs3306pbf irfsl3306pbf.pdf

..3. Size:245K inchange semiconductor
irfb3306.pdf

isc N-Channel MOSFET Transistor IRFB3306IIRFB3306FEATURESStatic drain-source on-resistance:RDS(on) 4.2mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONHigh efficiency synchronous rectification in SMPSUninterrruptible power supplyHigh speed pow

0.1. Size:292K international rectifier
irfb3306gpbf.pdf

PD - 96211IRFB3306GPbFHEXFET Power MOSFETApplicationsDVDSS60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.3.3ml Uninterruptible Power Supplyl High Speed Power Switching max. 4.2ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 160A ID (Package Limited)120A SBenefitsl Improved Gate, Avalanche and Dynamic dV/dtDRugged

7.1. Size:243K international rectifier
irfb3307zgpbf.pdf

PD - 96212AIRFB3307ZGPbFApplicationsl High Efficiency Synchronous Rectification inHEXFET Power MOSFETSMPSl Uninterruptible Power SupplyDVDSS75Vl High Speed Power SwitchingRDS(on) typ.l Hard Switched and High Frequency Circuits 4.6m max. 5.8mGID (Silicon Limited)128ABenefitsSID (Package Limited)120Al Improved Gate, Avalanche and Dynamicdv/dt Rugg

7.2. Size:316K international rectifier
irfb3307zpbf irfs3307zpbf irfs3307ztrlpbf irfsl3307zpbf.pdf

PD - 97214DIRFB3307ZPbFIRFS3307ZPbFApplicationsIRFSL3307ZPbFl High Efficiency Synchronous Rectification inSMPSHEXFET Power MOSFETl Uninterruptible Power Supplyl High Speed Power Switching D VDSS75Vl Hard Switched and High Frequency CircuitsRDS(on) typ.4.6m max. 5.8mGID (Silicon Limited)128ABenefitsID (Package Limited)120ASl Improved Gate, Av

7.3. Size:140K international rectifier
irfb3307pbf.pdf

PD - 95706CIRFB3307PbFIRFS3307PbFIRFSL3307PbFHEXFET Power MOSFETApplicationsl High Efficiency Synchronous Rectification in SMPSDVDSS75Vl Uninterruptible Power Supplyl High Speed Power Switching RDS(on) typ.5.0ml Hard Switched and High Frequency CircuitsG max. 6.3mID120ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterize

7.4. Size:316K infineon
irfb3307zpbf irfs3307zpbf irfsl3307zpbf.pdf

7.5. Size:246K inchange semiconductor
irfb3307z.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB3307Z IIRFB3307ZFEATURESStatic drain-source on-resistance:RDS(on) 5.8mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXI

7.6. Size:245K inchange semiconductor
irfb3307.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB3307 IIRFB3307FEATURESStatic drain-source on-resistance:RDS(on) 6.3mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMU

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