IRFB3306 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFB3306
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 230 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 160 A
Total Gate Charge (Qg): 85 nC
Maximum Drain-Source On-State Resistance (Rds): 0.0042 Ohm
Package: TO220AB
IRFB3306 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFB3306 Datasheet (PDF)
1.1. irfb3306gpbf.pdf 
Size:292K _upd-mosfet
PD - 96211 IRFB3306GPbF HEXFET® Power MOSFET Applications D VDSS 60V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 3.3m l Uninterruptible Power Supply l High Speed Power Switching max. 4.2m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 160A ID (Package Limited) 120A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt D Rugged
1.2. irfb3306pbf.pdf Size:323K _upd-mosfet
IRFB3306PbF IRFS3306PbF IRFSL3306PbF HEXFET® Power MOSFET Applications D l High Efficiency Synchronous Rectification in SMPS VDSS 60V l Uninterruptible Power Supply RDS(on) typ. 3.3m l High Speed Power Switching max. 4.2m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 160A Benefits ID (Package Limited) 120A S l Improved Gate, Avalanche and Dynamic dV/
1.3. irfb3306.pdf Size:245K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRFB3306，IIRFB3306 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.2mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·High efficiency synchronous rectification in SMPS ·Uninterrruptible power supply ·High speed pow
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
