All MOSFET. IRFB3306 Datasheet

 

IRFB3306 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFB3306

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 230 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 160 A

Total Gate Charge (Qg): 85 nC

Maximum Drain-Source On-State Resistance (Rds): 0.0042 Ohm

Package: TO220AB

IRFB3306 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFB3306 Datasheet (PDF)

0.1. irfb3306pbf irfs3306pbf irfsl3306pbf.pdf Size:323K _international_rectifier

IRFB3306
IRFB3306

IRFB3306PbFIRFS3306PbFIRFSL3306PbFHEXFET Power MOSFETApplicationsDl High Efficiency Synchronous Rectification in SMPS VDSS60Vl Uninterruptible Power SupplyRDS(on) typ.3.3ml High Speed Power Switching max. 4.2ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 160A BenefitsID (Package Limited)120A Sl Improved Gate, Avalanche and Dynamic dV/

0.2. irfb3306gpbf.pdf Size:292K _international_rectifier

IRFB3306
IRFB3306

PD - 96211IRFB3306GPbFHEXFET Power MOSFETApplicationsDVDSS60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.3.3ml Uninterruptible Power Supplyl High Speed Power Switching max. 4.2ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 160A ID (Package Limited)120A SBenefitsl Improved Gate, Avalanche and Dynamic dV/dtDRugged

 0.3. irfb3306.pdf Size:245K _inchange_semiconductor

IRFB3306
IRFB3306

isc N-Channel MOSFET Transistor IRFB3306IIRFB3306FEATURESStatic drain-source on-resistance:RDS(on) 4.2mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONHigh efficiency synchronous rectification in SMPSUninterrruptible power supplyHigh speed pow

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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