IRFB3306 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFB3306
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 230 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 160 A
Total Gate Charge (Qg): 85 nC
Maximum Drain-Source On-State Resistance (Rds): 0.0042 Ohm
Package: TO220AB
IRFB3306 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFB3306 Datasheet (PDF)
1.1. irfb3306gpbf.pdf 
Size:292K _upd-mosfet
PD - 96211 IRFB3306GPbF HEXFET® Power MOSFET Applications D VDSS 60V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 3.3m l Uninterruptible Power Supply l High Speed Power Switching max. 4.2m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 160A ID (Package Limited) 120A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt D Rugged
1.2. irfb3306pbf.pdf Size:323K _upd-mosfet
IRFB3306PbF IRFS3306PbF IRFSL3306PbF HEXFET® Power MOSFET Applications D l High Efficiency Synchronous Rectification in SMPS VDSS 60V l Uninterruptible Power Supply RDS(on) typ. 3.3m l High Speed Power Switching max. 4.2m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 160A Benefits ID (Package Limited) 120A S l Improved Gate, Avalanche and Dynamic dV/
3.1. irfb3307pbf.pdf Size:140K _upd-mosfet
PD - 95706C IRFB3307PbF IRFS3307PbF IRFSL3307PbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS D VDSS 75V l Uninterruptible Power Supply l High Speed Power Switching RDS(on) typ. 5.0m l Hard Switched and High Frequency Circuits G max. 6.3m ID 120A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterize
3.2. irfb3307zpbf.pdf Size:316K _upd-mosfet
PD - 97214D IRFB3307ZPbF IRFS3307ZPbF Applications IRFSL3307ZPbF l High Efficiency Synchronous Rectification in SMPS HEXFET® Power MOSFET l Uninterruptible Power Supply l High Speed Power Switching D VDSS 75V l Hard Switched and High Frequency Circuits RDS(on) typ. 4.6m Ω max. 5.8m Ω G ID (Silicon Limited) 128A Benefits ID (Package Limited) 120A S l Improved Gate, Av
Datasheet: NTF5P03T3 , NTF6P02 , NTGD1100L , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , IRF540N , NTGS3441 , NTGS3443 , NTGS3446 , NTGS3455 , NTGS4111P , NTGS4141N , NTGS5120P , NTHC5513 .
