IRFB4020 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFB4020
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 18 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.9 V
   Qgⓘ - Carga de la puerta: 18 nC
   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 91 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
   Paquete / Cubierta: TO220AB

Búsqueda de reemplazo de MOSFET IRFB4020

IRFB4020 Datasheet (PDF)

..1. Size:641K international rectifier
irfb4020pbf.pdf

PD - 97195DIGITAL AUDIO MOSFETIRFB4020PbFFeaturesKey Parameters Key parameters optimized for Class-D audioVDS200 V amplifier applicationsRDS(ON) typ. @ 10V m80 Low RDSON for improved efficiency Qg typ.18 nCQsw typ.6.7 nC Low QG and QSW for better THD and improvedRG(int) typ. 3.2 efficiencyTJ max175 C Low QRR for better THD and lower EM

..2. Size:641K infineon
irfb4020pbf.pdf

..3. Size:245K inchange semiconductor
irfb4020.pdf

isc N-Channel MOSFET Transistor IRFB4020IIRFB4020FEATURESStatic drain-source on-resistance:RDS(on) 100mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION175 operating junction temperature and repetitive avalanchecapabilityABSOLUTE MAXIMUM RATING

8.1. Size:281K international rectifier
irfb4019pbf.pdf

PD - 97075DIGITAL AUDIO MOSFETIRFB4019PbFFeaturesKey Parameters Key Parameters Optimized for Class-D AudioVDS 150 V Amplifier Applicationsm:RDS(ON) typ. @ 10V 80 Low RDSON for Improved EfficiencyQg typ. 13 nC Low QG and QSW for Better THD and ImprovedQsw typ. 5.1 nC EfficiencyRG(int) typ. 2.4 Low QRR for Better THD and Lower EMITJ max 175 C

8.2. Size:281K infineon
irfb4019pbf.pdf

8.3. Size:245K inchange semiconductor
irfb4019.pdf

isc N-Channel MOSFET Transistor IRFB4019IIRFB4019FEATURESStatic drain-source on-resistance:RDS(on) 95mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION175 operating junction temperature and repetitive avalanchecapabilityABSOLUTE MAXIMUM RATINGS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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