All MOSFET. IRFB4020 Datasheet

 

IRFB4020 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFB4020
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.9 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 18 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 91 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO220AB

 IRFB4020 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFB4020 Datasheet (PDF)

 ..1. Size:641K  international rectifier
 irfb4020pbf.pdf

IRFB4020 IRFB4020

PD - 97195DIGITAL AUDIO MOSFETIRFB4020PbFFeaturesKey Parameters Key parameters optimized for Class-D audioVDS200 V amplifier applicationsRDS(ON) typ. @ 10V m80 Low RDSON for improved efficiency Qg typ.18 nCQsw typ.6.7 nC Low QG and QSW for better THD and improvedRG(int) typ. 3.2 efficiencyTJ max175 C Low QRR for better THD and lower EM

 ..2. Size:641K  infineon
 irfb4020pbf.pdf

IRFB4020 IRFB4020

PD - 97195DIGITAL AUDIO MOSFETIRFB4020PbFFeaturesKey Parameters Key parameters optimized for Class-D audioVDS200 V amplifier applicationsRDS(ON) typ. @ 10V m80 Low RDSON for improved efficiency Qg typ.18 nCQsw typ.6.7 nC Low QG and QSW for better THD and improvedRG(int) typ. 3.2 efficiencyTJ max175 C Low QRR for better THD and lower EM

 ..3. Size:245K  inchange semiconductor
 irfb4020.pdf

IRFB4020 IRFB4020

isc N-Channel MOSFET Transistor IRFB4020IIRFB4020FEATURESStatic drain-source on-resistance:RDS(on) 100mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION175 operating junction temperature and repetitive avalanchecapabilityABSOLUTE MAXIMUM RATING

 8.1. Size:281K  international rectifier
 irfb4019pbf.pdf

IRFB4020 IRFB4020

PD - 97075DIGITAL AUDIO MOSFETIRFB4019PbFFeaturesKey Parameters Key Parameters Optimized for Class-D AudioVDS 150 V Amplifier Applicationsm:RDS(ON) typ. @ 10V 80 Low RDSON for Improved EfficiencyQg typ. 13 nC Low QG and QSW for Better THD and ImprovedQsw typ. 5.1 nC EfficiencyRG(int) typ. 2.4 Low QRR for Better THD and Lower EMITJ max 175 C

 8.2. Size:281K  infineon
 irfb4019pbf.pdf

IRFB4020 IRFB4020

PD - 97075DIGITAL AUDIO MOSFETIRFB4019PbFFeaturesKey Parameters Key Parameters Optimized for Class-D AudioVDS 150 V Amplifier Applicationsm:RDS(ON) typ. @ 10V 80 Low RDSON for Improved EfficiencyQg typ. 13 nC Low QG and QSW for Better THD and ImprovedQsw typ. 5.1 nC EfficiencyRG(int) typ. 2.4 Low QRR for Better THD and Lower EMITJ max 175 C

 8.3. Size:245K  inchange semiconductor
 irfb4019.pdf

IRFB4020 IRFB4020

isc N-Channel MOSFET Transistor IRFB4019IIRFB4019FEATURESStatic drain-source on-resistance:RDS(on) 95mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION175 operating junction temperature and repetitive avalanchecapabilityABSOLUTE MAXIMUM RATINGS

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: STP4NA80

 

 
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