All MOSFET. FMM60-02TF Datasheet

 

FMM60-02TF MOSFET. Datasheet pdf. Equivalent


   Type Designator: FMM60-02TF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 33 A
   Qgⓘ - Total Gate Charge: 90 nC
   trⓘ - Rise Time: 42 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: ISOPLUSI4

 FMM60-02TF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FMM60-02TF Datasheet (PDF)

 ..1. Size:95K  ixys
 fmm60-02tf.pdf

FMM60-02TF FMM60-02TF

Advance Technical InformationTrench Gate HiperFETVDSS = 200VFMM60-02TFN-Channel Power MOSFETID25 = 33A RDS(on) 40m 33T1trr(typ) = 82ns5544Phase Leg TopologyT211ISOPLUS i4-PakTM22Symbol Test Conditions Maximum RatingsTJ -55 ... +150 C 1TJM 150 CIsolated TabTstg -55 ... +150 C5VISOLD 50/60HZ, RMS, t

Datasheet: FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF , FMM50-025TF , 20N50 , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S .

 

 
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