FMM60-02TF MOSFET. Datasheet pdf. Equivalent
Type Designator: FMM60-02TF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 125 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 33 A
Total Gate Charge (Qg): 90 nC
Rise Time (tr): 42 nS
Maximum Drain-Source On-State Resistance (Rds): 0.04 Ohm
Package: ISOPLUSI4
FMM60-02TF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FMM60-02TF Datasheet (PDF)
..1. fmm60-02tf.pdf 
Size:95K _ixys
Advance Technical InformationTrench Gate HiperFETVDSS = 200VFMM60-02TFN-Channel Power MOSFETID25 = 33A RDS(on) 40m 33T1trr(typ) = 82ns5544Phase Leg TopologyT211ISOPLUS i4-PakTM22Symbol Test Conditions Maximum RatingsTJ -55 ... +150 C 1TJM 150 CIsolated TabTstg -55 ... +150 C5VISOLD 50/60HZ, RMS, t
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