FMM60-02TF Datasheet and Replacement
Type Designator: FMM60-02TF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id| ⓘ - Maximum Drain Current: 33 A
Qg ⓘ - Total Gate Charge: 90 nC
tr ⓘ - Rise Time: 42 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: ISOPLUSI4
FMM60-02TF substitution
FMM60-02TF Datasheet (PDF)
fmm60-02tf.pdf

Advance Technical InformationTrench Gate HiperFETVDSS = 200VFMM60-02TFN-Channel Power MOSFETID25 = 33A RDS(on) 40m 33T1trr(typ) = 82ns5544Phase Leg TopologyT211ISOPLUS i4-PakTM22Symbol Test Conditions Maximum RatingsTJ -55 ... +150 C 1TJM 150 CIsolated TabTstg -55 ... +150 C5VISOLD 50/60HZ, RMS, t
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: IRFP351
Keywords - FMM60-02TF MOSFET datasheet
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History: IRFP351



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