All MOSFET. FMM60-02TF Datasheet

 

FMM60-02TF Datasheet and Replacement


   Type Designator: FMM60-02TF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 33 A
   Qg ⓘ - Total Gate Charge: 90 nC
   tr ⓘ - Rise Time: 42 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: ISOPLUSI4
 

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FMM60-02TF Datasheet (PDF)

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FMM60-02TF

Advance Technical InformationTrench Gate HiperFETVDSS = 200VFMM60-02TFN-Channel Power MOSFETID25 = 33A RDS(on) 40m 33T1trr(typ) = 82ns5544Phase Leg TopologyT211ISOPLUS i4-PakTM22Symbol Test Conditions Maximum RatingsTJ -55 ... +150 C 1TJM 150 CIsolated TabTstg -55 ... +150 C5VISOLD 50/60HZ, RMS, t

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History: IRFP351

Keywords - FMM60-02TF MOSFET datasheet

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