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FMM60-02TF Specs and Replacement


   Type Designator: FMM60-02TF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 33 A
   tr ⓘ - Rise Time: 42 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: ISOPLUSI4
 

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FMM60-02TF Specs

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FMM60-02TF

Advance Technical Information Trench Gate HiperFET VDSS = 200V FMM60-02TF N-Channel Power MOSFET ID25 = 33A RDS(on) 40m 3 3 T1 trr(typ) = 82ns 5 5 4 4 Phase Leg Topology T2 1 1 ISOPLUS i4-PakTM 2 2 Symbol Test Conditions Maximum Ratings TJ -55 ... +150 C 1 TJM 150 C Isolated Tab Tstg -55 ... +150 C 5 VISOLD 50/60HZ, RMS, t ... See More ⇒

Detailed specifications: FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF , FMM50-025TF , K3569 , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S .

History: BF410C | NTTFS6H860NL | FDD6N50

Keywords - FMM60-02TF MOSFET specs

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