All MOSFET. JMH65R110ASFD Datasheet

 

JMH65R110ASFD Datasheet and Replacement


   Type Designator: JMH65R110ASFD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 347 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 32 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 93 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: TO247
 

 JMH65R110ASFD substitution

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JMH65R110ASFD Datasheet (PDF)

 ..1. Size:328K  jiejie micro
 jmh65r110asfd.pdf pdf_icon

JMH65R110ASFD

JMH65R110ASFD650V SuperJunction Power MOSFETFeatures Product SummaryParameter Extremely Low Gate Charge Value Unit VDS650 V Excellent Output Capacitance (Coss) Profile VGS(th)_Typ3.5 V Fast Switching Capability ID (@ VGS = 10V) (1) 32 A 100% UIS Tested, 100% Rg Tested RDS(ON)_Typ (@ VGS = 10V)95 mW Pb-free Lead Plating Eoss@400V7.8 mJ Haloge

 4.1. Size:358K  jiejie micro
 jmh65r110acfd jmh65r110aefd.pdf pdf_icon

JMH65R110ASFD

JMH65R110ACFDJMH65R110AEFD650V SuperJunction Power MOSFETFeatures Product SummaryParameter Extremely Low Gate Charge Value Unit VDS650 V Excellent Output Capacitance (Coss) Profile VGS(th)_Typ3.5 V Fast Switching Capability ID (@ VGS = 10V) (1) 35.0 A 100% UIS Tested, 100% Rg Tested RDS(ON)_Typ (@ VGS = 10V)98 m Pb-free Lead Plating Eoss@400V

 4.2. Size:320K  jiejie micro
 jmh65r110acfdq.pdf pdf_icon

JMH65R110ASFD

JMH65R110ACFDQ650V SuperJunction Power MOSFETFeatures Product Summary Extremely Low Gate Charge Parameter Value Unit VDS650 V Excellent Output Capacitance (Coss) Profile VGS(th)_Typ3.5 V Fast Switching Capability ID (@ VGS = 10V) (1) 35 A 100% UIS Tested, 100% Rg Tested RDS(ON)_Typ (@ VGS = 10V)99 m Pb-free Lead Plating Eoss@400V7.8 J Ha

 4.3. Size:299K  jiejie micro
 jmh65r110aplnfd.pdf pdf_icon

JMH65R110ASFD

JMH65R110APLNFD650V SuperJunction Power MOSFETFeatures Product SummaryParameter Extremely Low Gate Charge Value Unit VDS650 V Excellent Output Capacitance (Coss) Profile VGS(th)_Typ3.5 V Fast Switching Capability ID (@ VGS = 10V) (1) 32 A 100% UIS Tested, 100% Rg Tested RDS(ON)_Typ (@ VGS = 10V)95 m Pb-free Lead Plating Eoss@400V7.8 J

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Datasheet: JMH65R090PPLNFD , JMH65R090PSFD , JMH65R090PZFFD , JMH65R110ACFD , JMH65R110AEFD , JMH65R110ACFDQ , JMH65R110AEFDQ , JMH65R110APLNFD , AON7408 , JMH65R110PCFD , JMH65R110PEFD , JMH65R110PFFD , JMH65R110PPLNFD , JMSH040SAG , JMSH040SAGQ , JMSH040SPG , JMSH040SPGQ .

History: NCE4012S

Keywords - JMH65R110ASFD MOSFET datasheet

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