All MOSFET. FDMS0306AS Datasheet

 

FDMS0306AS MOSFET. Datasheet pdf. Equivalent

Type Designator: FDMS0306AS

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2.5 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 26 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 41 nC

Maximum Drain-Source On-State Resistance (Rds): 0.0024 Ohm

Package: PQFN5X6

FDMS0306AS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDMS0306AS Datasheet (PDF)

0.1. fdms0306as.pdf Size:288K _fairchild_semi

FDMS0306AS
FDMS0306AS

January 2015FDMS0306ASN-Channel PowerTrench SyncFETTM30 V, 49 A, 2.4 mFeatures General DescriptionThe FDMS0306AS has been designed to minimize losses in Max rDS(on) = 2.4 m at VGS = 10 V, ID = 26 Apower conversion application. Advancements in both silicon and Max rDS(on) = 3.0 m at VGS = 4.5 V, ID = 23 Apackage technologies have been combined to offer the lowest rD

7.1. fdms0308as.pdf Size:294K _fairchild_semi

FDMS0306AS
FDMS0306AS

October 2014FDMS0308ASN-Channel PowerTrench SyncFETTM30 V, 49 A, 2.8 mFeatures General DescriptionThe FDMS0308AS has been designed to minimize losses in Max rDS(on) = 2.8 m at VGS = 10 V, ID = 24 Apower conversion application. Advancements in both silicon and Max rDS(on) = 3.5 m at VGS = 4.5 V, ID = 21 Apackage technologies have been combined to offer the lowest rD

7.2. fdms0302s.pdf Size:468K _fairchild_semi

FDMS0306AS
FDMS0306AS

October 2014FDMS0302SN-Channel PowerTrench SyncFETTM30 V, 49 A, 1.9 mFeatures General DescriptionThe FDMS0302S has been designed to minimize losses in Max rDS(on) = 1.9 m at VGS = 10 V, ID = 28 Apower conversion application. Advancements in both silicon and Max rDS(on) = 2.4 m at VGS = 4.5 V, ID = 23 Apackage technologies have been combined to offer the lowest

 7.3. fdms030n06b.pdf Size:1403K _fairchild_semi

FDMS0306AS
FDMS0306AS

November 2013FDMS030N06BN-Channel PowerTrench MOSFET60 V, 100 A, 3 mFeatures Description RDS(on) = 2.4 m (Typ.) @ VGS = 10 V, ID = 50 A This N-Channel MOSFET is produced using Fairchild Advanced Package and Silicon Combination for Low RDS(on) Semiconductors advance PowerTrench process that hasand High Efficiency been tailored to minimize the on-state resistance wh

7.4. fdms0308cs.pdf Size:195K _fairchild_semi

FDMS0306AS
FDMS0306AS

August 2010FDMS0308CSN-Channel PowerTrench SyncFETTM 30 V, 42 A, 3 m Features General DescriptionThe FDMS0308CS has been designed to minimize losses in Max rDS(on) = 3.0 m at VGS = 10 V, ID = 21 Apower conversion application. Advancements in both silicon and Max rDS(on) = 3.5 m at VGS = 4.5 V, ID = 17 Apackage technologies have been combined to offer the lowest Advanc

 7.5. fdms0309as.pdf Size:309K _fairchild_semi

FDMS0306AS
FDMS0306AS

January 2015FDMS0309ASN-Channel PowerTrench SyncFETTM30 V, 49 A, 3.5 mFeatures General DescriptionThe FDMS0309AS has been designed to minimize losses in Max rDS(on) = 3.5 m at VGS = 10 V, ID = 21 Apower conversion application. Advancements in both silicon and Max rDS(on) = 4.3 m at VGS = 4.5 V, ID = 19 Apackage technologies have been combined to offer the lowest rD

7.6. fdms0300s.pdf Size:272K _fairchild_semi

FDMS0306AS
FDMS0306AS

October 2014FDMS0300SN-Channel PowerTrench SyncFET 30 V, 49 A, 1.8 mFeatures General DescriptionThe FDMS0300S has been designed to minimize losses in Max rDS(on) = 1.8 m at VGS = 10 V, ID = 30 Apower conversion application. Advancements in both silicon and Max rDS(on) = 2.0 m at VGS = 4.5 V, ID = 25 Apackage technologies have been combined to offer the lowest

7.7. fdms0308as.pdf Size:402K _onsemi

FDMS0306AS
FDMS0306AS

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: FMM22-06PF , FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , CEP83A3 , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS .

 

 
Back to Top