Аналог (замена) для FDMS0306AS

 

 

FDMS0306AS Datasheet (PDF)

1.1. fdms0306as.pdf Size:288K _fairchild_semi

January 2015 FDMS0306AS N-Channel PowerTrench® SyncFETTM 30 V, 49 A, 2.4 mΩ Features General Description The FDMS0306AS has been designed to minimize losses in Max rDS(on) = 2.4 mΩ at VGS = 10 V, ID = 26 A power conversion application. Advancements in both silicon and Max rDS(on) = 3.0 mΩ at VGS = 4.5 V, ID = 23 A package technologies have been combined to offer the lowest rD

3.1. fdms0308cs.pdf Size:195K _upd-mosfet

August 2010 FDMS0308CS N-Channel PowerTrench® SyncFETTM 30 V, 42 A, 3 m Features General Description The FDMS0308CS has been designed to minimize losses in Max rDS(on) = 3.0 m at VGS = 10 V, ID = 21 A power conversion application. Advancements in both silicon and Max rDS(on) = 3.5 m at VGS = 4.5 V, ID = 17 A package technologies have been combined to offer the lowest Advanc

3.2. fdms0302s.pdf Size:468K _fairchild_semi

October 2014 FDMS0302S N-Channel PowerTrench® SyncFETTM 30 V, 49 A, 1.9 mΩ Features General Description The FDMS0302S has been designed to minimize losses in Max rDS(on) = 1.9 mΩ at VGS = 10 V, ID = 28 A power conversion application. Advancements in both silicon and Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 23 A package technologies have been combined to offer the lowest

 3.3. fdms030n06b.pdf Size:1403K _fairchild_semi

November 2013 FDMS030N06B N-Channel PowerTrench® MOSFET 60 V, 100 A, 3 mΩ Features Description • RDS(on) = 2.4 mΩ (Typ.) @ VGS = 10 V, ID = 50 A This N-Channel MOSFET is produced using Fairchild • Advanced Package and Silicon Combination for Low RDS(on) Semiconductor’s advance PowerTrench® process that has and High Efficiency been tailored to minimize the on-state resistance wh

3.4. fdms0300s.pdf Size:272K _fairchild_semi

October 2014 FDMS0300S N-Channel PowerTrench® SyncFET™ 30 V, 49 A, 1.8 mΩ Features General Description The FDMS0300S has been designed to minimize losses in Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A power conversion application. Advancements in both silicon and Max rDS(on) = 2.0 mΩ at VGS = 4.5 V, ID = 25 A package technologies have been combined to offer the lowest

 3.5. fdms0309as.pdf Size:309K _fairchild_semi

January 2015 FDMS0309AS N-Channel PowerTrench® SyncFETTM 30 V, 49 A, 3.5 mΩ Features General Description The FDMS0309AS has been designed to minimize losses in Max rDS(on) = 3.5 mΩ at VGS = 10 V, ID = 21 A power conversion application. Advancements in both silicon and Max rDS(on) = 4.3 mΩ at VGS = 4.5 V, ID = 19 A package technologies have been combined to offer the lowest rD

3.6. fdms0308as.pdf Size:294K _fairchild_semi

October 2014 FDMS0308AS N-Channel PowerTrench® SyncFETTM 30 V, 49 A, 2.8 mΩ Features General Description The FDMS0308AS has been designed to minimize losses in Max rDS(on) = 2.8 mΩ at VGS = 10 V, ID = 24 A power conversion application. Advancements in both silicon and Max rDS(on) = 3.5 mΩ at VGS = 4.5 V, ID = 21 A package technologies have been combined to offer the lowest rD

     

 

Список транзисторов

Обновления

MOSFET: BUK637-400B | BUK437-500A | CMI80N06 | CMB80N06 | CMP80N06 | MTY30N50E | 2SK3262-01MR | VN88AF | TK290P60Y | SW069R10VS | SUP70040E | SUD25N15-52-E3 | STP30NF10FP | SKS10N20 | SiHA11N80E |