FDMS0306AS Todos los transistores

 

FDMS0306AS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDMS0306AS

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 2.5 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 26 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 3 V

Carga de compuerta (Qg): 41 nC

Resistencia drenaje-fuente RDS(on): 0.0024 Ohm

Empaquetado / Estuche: PQFN5X6

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FDMS0306AS Datasheet (PDF)

1.1. fdms0306as.pdf Size:288K _fairchild_semi

FDMS0306AS
FDMS0306AS

January 2015 FDMS0306AS N-Channel PowerTrench® SyncFETTM 30 V, 49 A, 2.4 mΩ Features General Description The FDMS0306AS has been designed to minimize losses in Max rDS(on) = 2.4 mΩ at VGS = 10 V, ID = 26 A power conversion application. Advancements in both silicon and Max rDS(on) = 3.0 mΩ at VGS = 4.5 V, ID = 23 A package technologies have been combined to offer the lowest rD

3.1. fdms0308cs.pdf Size:195K _upd-mosfet

FDMS0306AS
FDMS0306AS

August 2010 FDMS0308CS N-Channel PowerTrench® SyncFETTM 30 V, 42 A, 3 m Features General Description The FDMS0308CS has been designed to minimize losses in Max rDS(on) = 3.0 m at VGS = 10 V, ID = 21 A power conversion application. Advancements in both silicon and Max rDS(on) = 3.5 m at VGS = 4.5 V, ID = 17 A package technologies have been combined to offer the lowest Advanc

3.2. fdms0302s.pdf Size:468K _fairchild_semi

FDMS0306AS
FDMS0306AS

October 2014 FDMS0302S N-Channel PowerTrench® SyncFETTM 30 V, 49 A, 1.9 mΩ Features General Description The FDMS0302S has been designed to minimize losses in Max rDS(on) = 1.9 mΩ at VGS = 10 V, ID = 28 A power conversion application. Advancements in both silicon and Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 23 A package technologies have been combined to offer the lowest

 3.3. fdms030n06b.pdf Size:1403K _fairchild_semi

FDMS0306AS
FDMS0306AS

November 2013 FDMS030N06B N-Channel PowerTrench® MOSFET 60 V, 100 A, 3 mΩ Features Description • RDS(on) = 2.4 mΩ (Typ.) @ VGS = 10 V, ID = 50 A This N-Channel MOSFET is produced using Fairchild • Advanced Package and Silicon Combination for Low RDS(on) Semiconductor’s advance PowerTrench® process that has and High Efficiency been tailored to minimize the on-state resistance wh

3.4. fdms0300s.pdf Size:272K _fairchild_semi

FDMS0306AS
FDMS0306AS

October 2014 FDMS0300S N-Channel PowerTrench® SyncFET™ 30 V, 49 A, 1.8 mΩ Features General Description The FDMS0300S has been designed to minimize losses in Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A power conversion application. Advancements in both silicon and Max rDS(on) = 2.0 mΩ at VGS = 4.5 V, ID = 25 A package technologies have been combined to offer the lowest

 3.5. fdms0309as.pdf Size:309K _fairchild_semi

FDMS0306AS
FDMS0306AS

January 2015 FDMS0309AS N-Channel PowerTrench® SyncFETTM 30 V, 49 A, 3.5 mΩ Features General Description The FDMS0309AS has been designed to minimize losses in Max rDS(on) = 3.5 mΩ at VGS = 10 V, ID = 21 A power conversion application. Advancements in both silicon and Max rDS(on) = 4.3 mΩ at VGS = 4.5 V, ID = 19 A package technologies have been combined to offer the lowest rD

3.6. fdms0308as.pdf Size:294K _fairchild_semi

FDMS0306AS
FDMS0306AS

October 2014 FDMS0308AS N-Channel PowerTrench® SyncFETTM 30 V, 49 A, 2.8 mΩ Features General Description The FDMS0308AS has been designed to minimize losses in Max rDS(on) = 2.8 mΩ at VGS = 10 V, ID = 24 A power conversion application. Advancements in both silicon and Max rDS(on) = 3.5 mΩ at VGS = 4.5 V, ID = 21 A package technologies have been combined to offer the lowest rD

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