FDMC0310AS Datasheet. Specs and Replacement

Type Designator: FDMC0310AS  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 19 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0044 Ohm

Package: MLP3.3X3.3

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FDMC0310AS substitution

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FDMC0310AS datasheet

 ..1. Size:411K  fairchild semi
 fdmc0310as.pdf pdf_icon

FDMC0310AS

January 2015 FDMC0310AS N-Channel PowerTrench SyncFETTM 30 V, 21 A, 4.4 m Features General Description The FDMC0310AS has been designed to minimize losses in Max rDS(on) = 4.4 m at VGS = 10 V, ID = 19 A power conversion application. Advancements in both silicon and Max rDS(on) = 5.2 m at VGS = 4.5 V, ID = 17.5 A package technologies have been combined to offer the lowest ... See More ⇒

 9.1. Size:562K  onsemi
 fdmc010n08c.pdf pdf_icon

FDMC0310AS

www.onsemi.com FDMC010N08C N-Channel Shielded Gate PowerTrench MOSFET 80 V, 51 A, 10 m Features General Description Shielded Gate MOSFET Technology This N-Channel MV MOSFET is produced using ON Semiconductor s advanced PowerTrench process that Max rDS(on) = 10 m at VGS = 10 V, ID = 16 A incorporates Shielded Gate technology. This process has been Max rDS(on) = 25 m at... See More ⇒

Detailed specifications: FDMS0306AS, GMM3x120-0075X2-SMD, FDMS0300S, GMM3x160-0055X2-SMD, FDMC7200S, GMM3x180-004X2-SMD, FDMC7200, GMM3x60-015X2-SMD, 4435, GWM100-0085X1-SL, FDMS3610S, GWM100-0085X1-SMD, FDMS3606S, GWM100-01X1-SL, FDMS3604S, GWM100-01X1-SMD, FDMS3602AS

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