All MOSFET. FDMC0310AS Datasheet

 

FDMC0310AS Datasheet and Replacement


   Type Designator: FDMC0310AS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 19 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0044 Ohm
   Package: MLP3.3X3.3
 

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FDMC0310AS Datasheet (PDF)

 ..1. Size:411K  fairchild semi
 fdmc0310as.pdf pdf_icon

FDMC0310AS

January 2015FDMC0310ASN-Channel PowerTrench SyncFETTM30 V, 21 A, 4.4 mFeatures General DescriptionThe FDMC0310AS has been designed to minimize losses in Max rDS(on) = 4.4 m at VGS = 10 V, ID = 19 Apower conversion application. Advancements in both silicon and Max rDS(on) = 5.2 m at VGS = 4.5 V, ID = 17.5 Apackage technologies have been combined to offer the lowest

 9.1. Size:562K  onsemi
 fdmc010n08c.pdf pdf_icon

FDMC0310AS

www.onsemi.comFDMC010N08CN-Channel Shielded Gate PowerTrench MOSFET 80 V, 51 A, 10 mFeatures General Description Shielded Gate MOSFET TechnologyThis N-Channel MV MOSFET is produced using ONSemiconductors advanced PowerTrench process that Max rDS(on) = 10 m at VGS = 10 V, ID = 16 Aincorporates Shielded Gate technology. This process has been Max rDS(on) = 25 m at

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Keywords - FDMC0310AS MOSFET datasheet

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