All MOSFET. FDMC0310AS Datasheet

 

FDMC0310AS MOSFET. Datasheet pdf. Equivalent

Type Designator: FDMC0310AS

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2.4 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 19 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 37 nC

Maximum Drain-Source On-State Resistance (Rds): 0.0044 Ohm

Package: MLP3.3X3.3

FDMC0310AS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDMC0310AS Datasheet (PDF)

1.1. fdmc0310as.pdf Size:411K _fairchild_semi

FDMC0310AS
FDMC0310AS

January 2015 FDMC0310AS N-Channel PowerTrench® SyncFETTM 30 V, 21 A, 4.4 mΩ Features General Description The FDMC0310AS has been designed to minimize losses in Max rDS(on) = 4.4 mΩ at VGS = 10 V, ID = 19 A power conversion application. Advancements in both silicon and Max rDS(on) = 5.2 mΩ at VGS = 4.5 V, ID = 17.5 A package technologies have been combined to offer the lowest

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