FDMC0310AS MOSFET. Datasheet pdf. Equivalent
Type Designator: FDMC0310AS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 2.4 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 19 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 37 nC
Maximum Drain-Source On-State Resistance (Rds): 0.0044 Ohm
Package: MLP3.3X3.3
FDMC0310AS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDMC0310AS Datasheet (PDF)
..1. fdmc0310as.pdf 
Size:411K _fairchild_semi
January 2015FDMC0310ASN-Channel PowerTrench SyncFETTM30 V, 21 A, 4.4 mFeatures General DescriptionThe FDMC0310AS has been designed to minimize losses in Max rDS(on) = 4.4 m at VGS = 10 V, ID = 19 Apower conversion application. Advancements in both silicon and Max rDS(on) = 5.2 m at VGS = 4.5 V, ID = 17.5 Apackage technologies have been combined to offer the lowest
9.1. fdmc010n08c.pdf Size:562K _onsemi
www.onsemi.comFDMC010N08CN-Channel Shielded Gate PowerTrench MOSFET 80 V, 51 A, 10 mFeatures General Description Shielded Gate MOSFET TechnologyThis N-Channel MV MOSFET is produced using ONSemiconductors advanced PowerTrench process that Max rDS(on) = 10 m at VGS = 10 V, ID = 16 Aincorporates Shielded Gate technology. This process has been Max rDS(on) = 25 m at
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