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JMH65R110AEFD Spec and Replacement


   Type Designator: JMH65R110AEFD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 313 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 93 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: TO263

 JMH65R110AEFD Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

JMH65R110AEFD Specs

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 jmh65r110acfd jmh65r110aefd.pdf pdf_icon

JMH65R110AEFD

JMH65R110ACFD JMH65R110AEFD 650V SuperJunction Power MOSFET Features Product Summary Parameter Extremely Low Gate Charge Value Unit VDS 650 V Excellent Output Capacitance (Coss) Profile VGS(th)_Typ 3.5 V Fast Switching Capability ID (@ VGS = 10V) (1) 35.0 A 100% UIS Tested, 100% Rg Tested RDS(ON)_Typ (@ VGS = 10V) 98 m Pb-free Lead Plating Eoss@400V ... See More ⇒

 0.1. Size:278K  jiejie micro
 jmh65r110aefdq.pdf pdf_icon

JMH65R110AEFD

JMH65R110AEFDQ 650V SuperJunction Power MOSFET Features Product Summary Parameter Extremely Low Gate Charge Value Unit VDS 650 V Excellent Output Capacitance (Coss) Profile VGS(th)_Typ 3.5 V Fast Switching Capability ID (@ VGS = 10V) (1) 35 A 100% UIS Tested, 100% Rg Tested RDS(ON)_Typ (@ VGS = 10V) 98 m Pb-free Lead Plating Eoss@400V 7.8 J H... See More ⇒

 4.1. Size:320K  jiejie micro
 jmh65r110acfdq.pdf pdf_icon

JMH65R110AEFD

JMH65R110ACFDQ 650V SuperJunction Power MOSFET Features Product Summary Extremely Low Gate Charge Parameter Value Unit VDS 650 V Excellent Output Capacitance (Coss) Profile VGS(th)_Typ 3.5 V Fast Switching Capability ID (@ VGS = 10V) (1) 35 A 100% UIS Tested, 100% Rg Tested RDS(ON)_Typ (@ VGS = 10V) 99 m Pb-free Lead Plating Eoss@400V 7.8 J Ha... See More ⇒

 4.2. Size:328K  jiejie micro
 jmh65r110asfd.pdf pdf_icon

JMH65R110AEFD

JMH65R110ASFD 650V SuperJunction Power MOSFET Features Product Summary Parameter Extremely Low Gate Charge Value Unit VDS 650 V Excellent Output Capacitance (Coss) Profile VGS(th)_Typ 3.5 V Fast Switching Capability ID (@ VGS = 10V) (1) 32 A 100% UIS Tested, 100% Rg Tested RDS(ON)_Typ (@ VGS = 10V) 95 mW Pb-free Lead Plating Eoss@400V 7.8 mJ Haloge... See More ⇒

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Detailed specifications: JMSH1535AG , JMSH1535AGQ , JMH65R090PCFD , JMH65R090PFFD , JMH65R090PPLNFD , JMH65R090PSFD , JMH65R090PZFFD , JMH65R110ACFD , 2N7000 , JMH65R110ACFDQ , JMH65R110AEFDQ , JMH65R110APLNFD , JMH65R110ASFD , JMH65R110PCFD , JMH65R110PEFD , JMH65R110PFFD , JMH65R110PPLNFD .

History: JMH65R090PFFD | JMH65R090PZFFD | HGI059N08AL | NCE6990D | JMH65R110ACFD

Keywords - JMH65R110AEFD MOSFET specs

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