All MOSFET. RFP50N06 Datasheet

 

RFP50N06 MOSFET. Datasheet pdf. Equivalent

Type Designator: RFP50N06

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 131 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 50 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 125 nC

Rise Time (tr): 55 nS

Drain-Source Capacitance (Cd): 600 pF

Maximum Drain-Source On-State Resistance (Rds): 0.022 Ohm

Package: TO220AB

RFP50N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RFP50N06 Datasheet (PDF)

..1. rfp50n06.pdf Size:74K _intersil

RFP50N06
RFP50N06

RFG50N06, RFP50N06, RF1S50N06SMData Sheet July 1999 File Number 3575.450A, 60V, 0.022 Ohm, N-Channel Power FeaturesMOSFETs 50A, 60VThese N-Channel power MOSFETs are manufactured using rDS(ON) = 0.022the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits givesoptimum utilizati

..2. rfp50n06.pdf Size:230K _inchange_semiconductor

RFP50N06
RFP50N06

isc N-Channel MOSFET Transistor RFP50N06DESCRIPTIONDrain Current I =50A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 22m(Max)DS(on)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS Designed for use in applications such as swithingRegulators,switc

0.1. rfg50n06 rfp50n06 rf1s50n06sm.pdf Size:373K _fairchild_semi

RFP50N06
RFP50N06

RFG50N06, RFP50N06, RF1S50N06SMData Sheet January 200250A, 60V, 0.022 Ohm, N-Channel Power FeaturesMOSFETs 50A, 60VThese N-Channel power MOSFETs are manufactured using rDS(ON) = 0.022 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits gives optimum utilization of silico

0.2. rfg50n06le rfp50n06le rf1s50n06lesm.pdf Size:154K _intersil

RFP50N06
RFP50N06

RFG50N06LE, RFP50N06LE, RF1S50N06LESMData Sheet October 1999 File Number 4072.350A, 60V, 0.022 Ohm, Logic Level FeaturesN-Channel Power MOSFETs 50A, 60VThese N-Channel enhancement mode power MOSFETs are rDS(ON) = 0.022manufactured using the latest manufacturing process Temperature Compensating PSPICE Modeltechnology. This process, which uses feature sizesapproa

 

 

 7.1. rfp50n05l.pdf Size:161K _fairchild_semi

RFP50N06
RFP50N06

RFP50N05LData Sheet August 200450A, 50V, 0.022 Ohm, Logic Level, FeaturesN-Channel Power MOSFETs 50A, 50VThese are logic-level N-channel power MOSFETs rDS(ON) = 0.022manufactured using the MegaFET process. This process, UIS SOA Rating Curve (Single Pulse)which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon,

7.2. rfg50n05l rfp50n05l.pdf Size:51K _intersil

RFP50N06
RFP50N06

RFG50N05L, RFP50N05LData Sheet July 1999 File Number 2424.350A, 50V, 0.022 Ohm, Logic Level, FeaturesN-Channel Power MOSFETs 50A, 50VThese are logic-level N-channel power MOSFETs rDS(ON) = 0.022manufactured using the MegaFET process. This process, UIS SOA Rating Curve (Single Pulse)which uses feature sizes approaching those of LSIintegrated circuits gives optimum

Datasheet: RFP40N10 , RFP40N10LE , RFP45N06 , RFP45N06LE , RFP4N05L , RFP4N06L , RFP4N100 , RFP50N05L , IRFP064N , RFP50N06LE , RFP60P03 , RFP70N03 , RFP70N06 , RFP7N10LE , RFP8N20L , RFP8P05 , RFP8P06E .

 

 
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