RFP50N06 Todos los transistores

 

RFP50N06 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RFP50N06
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 131 W
   Voltaje máximo drenador - fuente |Vds|: 60 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 50 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 125 nC
   Tiempo de subida (tr): 55 nS
   Conductancia de drenaje-sustrato (Cd): 600 pF
   Resistencia entre drenaje y fuente RDS(on): 0.022 Ohm
   Paquete / Cubierta: TO220AB

 Búsqueda de reemplazo de MOSFET RFP50N06

 

RFP50N06 Datasheet (PDF)

 ..1. Size:373K  fairchild semi
 rfg50n06 rfp50n06 rf1s50n06sm.pdf

RFP50N06 RFP50N06

RFG50N06, RFP50N06, RF1S50N06SMData Sheet January 200250A, 60V, 0.022 Ohm, N-Channel Power FeaturesMOSFETs 50A, 60VThese N-Channel power MOSFETs are manufactured using rDS(ON) = 0.022 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits gives optimum utilization of silico

 ..2. Size:74K  intersil
 rfp50n06.pdf

RFP50N06 RFP50N06

RFG50N06, RFP50N06, RF1S50N06SMData Sheet July 1999 File Number 3575.450A, 60V, 0.022 Ohm, N-Channel Power FeaturesMOSFETs 50A, 60VThese N-Channel power MOSFETs are manufactured using rDS(ON) = 0.022the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits givesoptimum utilizati

 ..3. Size:230K  inchange semiconductor
 rfp50n06.pdf

RFP50N06 RFP50N06

isc N-Channel MOSFET Transistor RFP50N06DESCRIPTIONDrain Current I =50A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 22m(Max)DS(on)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS Designed for use in applications such as swithingRegulators,switc

 0.1. Size:154K  intersil
 rfg50n06le rfp50n06le rf1s50n06lesm.pdf

RFP50N06 RFP50N06

RFG50N06LE, RFP50N06LE, RF1S50N06LESMData Sheet October 1999 File Number 4072.350A, 60V, 0.022 Ohm, Logic Level FeaturesN-Channel Power MOSFETs 50A, 60VThese N-Channel enhancement mode power MOSFETs are rDS(ON) = 0.022manufactured using the latest manufacturing process Temperature Compensating PSPICE Modeltechnology. This process, which uses feature sizesapproa

 7.1. Size:161K  fairchild semi
 rfp50n05l.pdf

RFP50N06 RFP50N06

RFP50N05LData Sheet August 200450A, 50V, 0.022 Ohm, Logic Level, FeaturesN-Channel Power MOSFETs 50A, 50VThese are logic-level N-channel power MOSFETs rDS(ON) = 0.022manufactured using the MegaFET process. This process, UIS SOA Rating Curve (Single Pulse)which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon,

 7.2. Size:51K  intersil
 rfg50n05l rfp50n05l.pdf

RFP50N06 RFP50N06

RFG50N05L, RFP50N05LData Sheet July 1999 File Number 2424.350A, 50V, 0.022 Ohm, Logic Level, FeaturesN-Channel Power MOSFETs 50A, 50VThese are logic-level N-channel power MOSFETs rDS(ON) = 0.022manufactured using the MegaFET process. This process, UIS SOA Rating Curve (Single Pulse)which uses feature sizes approaching those of LSIintegrated circuits gives optimum

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