RFP50N06 datasheet, подбор замены

 ..1. Size:373K  fairchild semi
 rfg50n06 rfp50n06 rf1s50n06sm.pdf 

RFG50N06, RFP50N06, RF1S50N06SM Data Sheet January 2002 50A, 60V, 0.022 Ohm, N-Channel Power Features MOSFETs 50A, 60V These N-Channel power MOSFETs are manufactured using rDS(ON) = 0.022 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI integrated circuits gives optimum utilization of silico

 ..2. Size:77K  harris semi
 rfg50n06 rfp50n06 rf1s50n06 rf1s50n06sm.pdf 

RFG50N06, RFP50N06, S E M I C O N D U C T O R RF1S50N06, RF1S50N06SM 50A, 60V, Avalanche Rated N-Channel December 1995 Enhancement-Mode Power MOSFETs Features Packages JEDEC STYLE TO-247 50A, 60V SOURCE rDS(ON) = 0.022 DRAIN GATE Temperature Compensating PSPICE Model DRAIN Peak Current vs Pulse Width Curve (BOTTOM SIDE METAL) UIS Rating Curve +175oC Op

 ..3. Size:74K  intersil
 rfp50n06.pdf 

RFG50N06, RFP50N06, RF1S50N06SM Data Sheet July 1999 File Number 3575.4 50A, 60V, 0.022 Ohm, N-Channel Power Features MOSFETs 50A, 60V These N-Channel power MOSFETs are manufactured using rDS(ON) = 0.022 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI integrated circuits gives optimum utilizati

 ..4. Size:230K  inchange semiconductor
 rfp50n06.pdf 

isc N-Channel MOSFET Transistor RFP50N06 DESCRIPTION Drain Current I =50A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Static Drain-Source On-Resistance R = 22m (Max) DS(on) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in applications such as swithing Regulators,switc

 0.1. Size:154K  intersil
 rfg50n06le rfp50n06le rf1s50n06lesm.pdf 

RFG50N06LE, RFP50N06LE, RF1S50N06LESM Data Sheet October 1999 File Number 4072.3 50A, 60V, 0.022 Ohm, Logic Level Features N-Channel Power MOSFETs 50A, 60V These N-Channel enhancement mode power MOSFETs are rDS(ON) = 0.022 manufactured using the latest manufacturing process Temperature Compensating PSPICE Model technology. This process, which uses feature sizes approa

 7.1. Size:161K  fairchild semi
 rfp50n05l.pdf 

RFP50N05L Data Sheet August 2004 50A, 50V, 0.022 Ohm, Logic Level, Features N-Channel Power MOSFETs 50A, 50V These are logic-level N-channel power MOSFETs rDS(ON) = 0.022 manufactured using the MegaFET process. This process, UIS SOA Rating Curve (Single Pulse) which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon,

 7.2. Size:51K  intersil
 rfg50n05l rfp50n05l.pdf 

RFG50N05L, RFP50N05L Data Sheet July 1999 File Number 2424.3 50A, 50V, 0.022 Ohm, Logic Level, Features N-Channel Power MOSFETs 50A, 50V These are logic-level N-channel power MOSFETs rDS(ON) = 0.022 manufactured using the MegaFET process. This process, UIS SOA Rating Curve (Single Pulse) which uses feature sizes approaching those of LSI integrated circuits gives optimum