Справочник MOSFET. RFP50N06

 

RFP50N06 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: RFP50N06
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 131 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 50 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 125 nC
   trⓘ - Время нарастания: 55 ns
   Cossⓘ - Выходная емкость: 600 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.022 Ohm
   Тип корпуса: TO220AB

 Аналог (замена) для RFP50N06

 

 

RFP50N06 Datasheet (PDF)

 ..1. Size:373K  fairchild semi
 rfg50n06 rfp50n06 rf1s50n06sm.pdf

RFP50N06 RFP50N06

RFG50N06, RFP50N06, RF1S50N06SMData Sheet January 200250A, 60V, 0.022 Ohm, N-Channel Power FeaturesMOSFETs 50A, 60VThese N-Channel power MOSFETs are manufactured using rDS(ON) = 0.022 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits gives optimum utilization of silico

 ..2. Size:74K  intersil
 rfp50n06.pdf

RFP50N06 RFP50N06

RFG50N06, RFP50N06, RF1S50N06SMData Sheet July 1999 File Number 3575.450A, 60V, 0.022 Ohm, N-Channel Power FeaturesMOSFETs 50A, 60VThese N-Channel power MOSFETs are manufactured using rDS(ON) = 0.022the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits givesoptimum utilizati

 ..3. Size:230K  inchange semiconductor
 rfp50n06.pdf

RFP50N06 RFP50N06

isc N-Channel MOSFET Transistor RFP50N06DESCRIPTIONDrain Current I =50A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 22m(Max)DS(on)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS Designed for use in applications such as swithingRegulators,switc

 0.1. Size:154K  intersil
 rfg50n06le rfp50n06le rf1s50n06lesm.pdf

RFP50N06 RFP50N06

RFG50N06LE, RFP50N06LE, RF1S50N06LESMData Sheet October 1999 File Number 4072.350A, 60V, 0.022 Ohm, Logic Level FeaturesN-Channel Power MOSFETs 50A, 60VThese N-Channel enhancement mode power MOSFETs are rDS(ON) = 0.022manufactured using the latest manufacturing process Temperature Compensating PSPICE Modeltechnology. This process, which uses feature sizesapproa

 7.1. Size:161K  fairchild semi
 rfp50n05l.pdf

RFP50N06 RFP50N06

RFP50N05LData Sheet August 200450A, 50V, 0.022 Ohm, Logic Level, FeaturesN-Channel Power MOSFETs 50A, 50VThese are logic-level N-channel power MOSFETs rDS(ON) = 0.022manufactured using the MegaFET process. This process, UIS SOA Rating Curve (Single Pulse)which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon,

 7.2. Size:51K  intersil
 rfg50n05l rfp50n05l.pdf

RFP50N06 RFP50N06

RFG50N05L, RFP50N05LData Sheet July 1999 File Number 2424.350A, 50V, 0.022 Ohm, Logic Level, FeaturesN-Channel Power MOSFETs 50A, 50VThese are logic-level N-channel power MOSFETs rDS(ON) = 0.022manufactured using the MegaFET process. This process, UIS SOA Rating Curve (Single Pulse)which uses feature sizes approaching those of LSIintegrated circuits gives optimum

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