FMM75-01F MOSFET. Datasheet pdf. Equivalent
Type Designator: FMM75-01F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 130 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 75 A
Qgⓘ - Total Gate Charge: 180 nC
trⓘ - Rise Time: 60 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: ISOPLUSI4
FMM75-01F Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FMM75-01F Datasheet (PDF)
fmm75-01f.pdf
FMM 75-01FID25 = 75 AHiPerFETTM Power MOSFETVDSS = 100 VPhaseleg Topologyin ISOPLUS i4-PACTMRDSon typ. = 18 m3Preliminary dataT154T2 1125Features MOSFET T1/T2 HiPerFETTM technologySymbol Conditions Maximum Ratings - low RDSon- low gate charge for high frequencyVDSS TVJ = 25C to 150C 100 V operation- unclamped inductive
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918