FMM75-01F Datasheet. Specs and Replacement
Type Designator: FMM75-01F 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 130 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 75 A
Electrical Characteristics
tr ⓘ - Rise Time: 60 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: ISOPLUSI4
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FMM75-01F substitution
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FMM75-01F datasheet
fmm75-01f.pdf
FMM 75-01F ID25 = 75 A HiPerFETTM Power MOSFET VDSS = 100 V Phaseleg Topology in ISOPLUS i4-PACTM RDSon typ. = 18 m 3 Preliminary data T1 5 4 T2 1 1 2 5 Features MOSFET T1/T2 HiPerFETTM technology Symbol Conditions Maximum Ratings - low RDSon - low gate charge for high frequency VDSS TVJ = 25 C to 150 C 100 V operation - unclamped inductive ... See More ⇒
Detailed specifications: FDBL86361F085, FMK75-01F, FMM110-015X2F, FMM150-0075X2F, FMM22-05PF, FMM22-06PF, FMM50-025TF, FMM60-02TF, 13N50, FMP26-02P, FMP36-015P, FMP76-01T, GMM3x100-01X1-SMD, FDMS0306AS, GMM3x120-0075X2-SMD, FDMS0300S, GMM3x160-0055X2-SMD
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