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FMP26-02P Specs and Replacement


   Type Designator: FMP26-02P
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 17 A
   tr ⓘ - Rise Time: 21 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
   Package: ISOPLUSI4
 

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FMP26-02P Specs

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FMP26-02P

Preliminary Technical Information P CH. N CH. PolarTM P & N-Channel FMP26-02P Power MOSFET VDSS - 200V 200V Common Drain Topology 3 4 ID25 - 17A 26A T1 5 5 RDS(on) 170m 60m 4 3 trr(typ) 240ns 150ns T2 (Electrically Isolated Tab) 1 1 2 2 ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings TJ -55 ... +150 C TJM 150 C Tstg -55 ...... See More ⇒

Detailed specifications: FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF , FMM50-025TF , FMM60-02TF , FMM75-01F , 4435 , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S .

History: FDD6796A

Keywords - FMP26-02P MOSFET specs

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