FMP26-02P Datasheet and Replacement
Type Designator: FMP26-02P
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 17 A
Qgⓘ - Total Gate Charge: 56 nC
trⓘ - Rise Time: 21 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
Package: ISOPLUSI4
- MOSFET Cross-Reference Search
FMP26-02P Datasheet (PDF)
fmp26-02p.pdf

Preliminary Technical Information P CH. N CH.PolarTM P & N-ChannelFMP26-02PPower MOSFETVDSS - 200V 200VCommon Drain Topology34 ID25 - 17A 26AT155 RDS(on) 170m 60m 43trr(typ) 240ns 150nsT2(Electrically Isolated Tab) 1122ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsTJ -55 ... +150 CTJM 150 CTstg -55 ...
Datasheet: FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF , FMM50-025TF , FMM60-02TF , FMM75-01F , K4145 , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S .
History: FMM50-025TF | IRFP442
Keywords - FMP26-02P MOSFET datasheet
FMP26-02P cross reference
FMP26-02P equivalent finder
FMP26-02P lookup
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History: FMM50-025TF | IRFP442



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