All MOSFET. FDMS0300S Datasheet

 

FDMS0300S MOSFET. Datasheet pdf. Equivalent

Type Designator: FDMS0300S

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2.5 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 31 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 95 nC

Maximum Drain-Source On-State Resistance (Rds): 0.0018 Ohm

Package: PQFN5X6

FDMS0300S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDMS0300S Datasheet (PDF)

1.1. fdms0300s.pdf Size:272K _fairchild_semi

FDMS0300S
FDMS0300S

October 2014 FDMS0300S N-Channel PowerTrench® SyncFET™ 30 V, 49 A, 1.8 mΩ Features General Description The FDMS0300S has been designed to minimize losses in Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A power conversion application. Advancements in both silicon and Max rDS(on) = 2.0 mΩ at VGS = 4.5 V, ID = 25 A package technologies have been combined to offer the lowest

3.1. fdms0308cs.pdf Size:195K _upd-mosfet

FDMS0300S
FDMS0300S

August 2010 FDMS0308CS N-Channel PowerTrench® SyncFETTM 30 V, 42 A, 3 m Features General Description The FDMS0308CS has been designed to minimize losses in Max rDS(on) = 3.0 m at VGS = 10 V, ID = 21 A power conversion application. Advancements in both silicon and Max rDS(on) = 3.5 m at VGS = 4.5 V, ID = 17 A package technologies have been combined to offer the lowest Advanc

3.2. fdms0302s.pdf Size:468K _fairchild_semi

FDMS0300S
FDMS0300S

October 2014 FDMS0302S N-Channel PowerTrench® SyncFETTM 30 V, 49 A, 1.9 mΩ Features General Description The FDMS0302S has been designed to minimize losses in Max rDS(on) = 1.9 mΩ at VGS = 10 V, ID = 28 A power conversion application. Advancements in both silicon and Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 23 A package technologies have been combined to offer the lowest

 3.3. fdms030n06b.pdf Size:1403K _fairchild_semi

FDMS0300S
FDMS0300S

November 2013 FDMS030N06B N-Channel PowerTrench® MOSFET 60 V, 100 A, 3 mΩ Features Description • RDS(on) = 2.4 mΩ (Typ.) @ VGS = 10 V, ID = 50 A This N-Channel MOSFET is produced using Fairchild • Advanced Package and Silicon Combination for Low RDS(on) Semiconductor’s advance PowerTrench® process that has and High Efficiency been tailored to minimize the on-state resistance wh

3.4. fdms0306as.pdf Size:288K _fairchild_semi

FDMS0300S
FDMS0300S

January 2015 FDMS0306AS N-Channel PowerTrench® SyncFETTM 30 V, 49 A, 2.4 mΩ Features General Description The FDMS0306AS has been designed to minimize losses in Max rDS(on) = 2.4 mΩ at VGS = 10 V, ID = 26 A power conversion application. Advancements in both silicon and Max rDS(on) = 3.0 mΩ at VGS = 4.5 V, ID = 23 A package technologies have been combined to offer the lowest rD

 3.5. fdms0309as.pdf Size:309K _fairchild_semi

FDMS0300S
FDMS0300S

January 2015 FDMS0309AS N-Channel PowerTrench® SyncFETTM 30 V, 49 A, 3.5 mΩ Features General Description The FDMS0309AS has been designed to minimize losses in Max rDS(on) = 3.5 mΩ at VGS = 10 V, ID = 21 A power conversion application. Advancements in both silicon and Max rDS(on) = 4.3 mΩ at VGS = 4.5 V, ID = 19 A package technologies have been combined to offer the lowest rD

3.6. fdms0308as.pdf Size:294K _fairchild_semi

FDMS0300S
FDMS0300S

October 2014 FDMS0308AS N-Channel PowerTrench® SyncFETTM 30 V, 49 A, 2.8 mΩ Features General Description The FDMS0308AS has been designed to minimize losses in Max rDS(on) = 2.8 mΩ at VGS = 10 V, ID = 24 A power conversion application. Advancements in both silicon and Max rDS(on) = 3.5 mΩ at VGS = 4.5 V, ID = 21 A package technologies have been combined to offer the lowest rD

Datasheet: FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , IRF1405 , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S .

 

 
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