FDMS0300S Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: FDMS0300S
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 2.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 31 A
Tj ⓘ - Максимальная температура канала: 150 °C
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0018 Ohm
Тип корпуса: PQFN5X6
Аналог (замена) для FDMS0300S
FDMS0300S Datasheet (PDF)
fdms0300s.pdf

October 2014FDMS0300SN-Channel PowerTrench SyncFET 30 V, 49 A, 1.8 mFeatures General DescriptionThe FDMS0300S has been designed to minimize losses in Max rDS(on) = 1.8 m at VGS = 10 V, ID = 30 Apower conversion application. Advancements in both silicon and Max rDS(on) = 2.0 m at VGS = 4.5 V, ID = 25 Apackage technologies have been combined to offer the lowest
fdms0306as.pdf

January 2015FDMS0306ASN-Channel PowerTrench SyncFETTM30 V, 49 A, 2.4 mFeatures General DescriptionThe FDMS0306AS has been designed to minimize losses in Max rDS(on) = 2.4 m at VGS = 10 V, ID = 26 Apower conversion application. Advancements in both silicon and Max rDS(on) = 3.0 m at VGS = 4.5 V, ID = 23 Apackage technologies have been combined to offer the lowest rD
fdms030n06b.pdf

November 2013FDMS030N06BN-Channel PowerTrench MOSFET60 V, 100 A, 3 mFeatures Description RDS(on) = 2.4 m (Typ.) @ VGS = 10 V, ID = 50 A This N-Channel MOSFET is produced using Fairchild Advanced Package and Silicon Combination for Low RDS(on) Semiconductors advance PowerTrench process that hasand High Efficiency been tailored to minimize the on-state resistance wh
fdms0308cs.pdf

August 2010FDMS0308CSN-Channel PowerTrench SyncFETTM 30 V, 42 A, 3 m Features General DescriptionThe FDMS0308CS has been designed to minimize losses in Max rDS(on) = 3.0 m at VGS = 10 V, ID = 21 Apower conversion application. Advancements in both silicon and Max rDS(on) = 3.5 m at VGS = 4.5 V, ID = 17 Apackage technologies have been combined to offer the lowest Advanc
Другие MOSFET... FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , 4N60 , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S .
History: 2N4391 | FK18SM-9



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