Справочник MOSFET. FDMS0300S

 

FDMS0300S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: FDMS0300S

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 2.5 W

Предельно допустимое напряжение сток-исток |Uds|: 30 V

Предельно допустимое напряжение затвор-исток |Ugs|: 20 V

Пороговое напряжение включения |Ugs(th)|: 3 V

Максимально допустимый постоянный ток стока |Id|: 31 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 95 nC

Сопротивление сток-исток открытого транзистора (Rds): 0.0018 Ohm

Тип корпуса: PQFN5X6

Аналог (замена) для FDMS0300S

 

 

FDMS0300S Datasheet (PDF)

..1. fdms0300s.pdf Size:272K _fairchild_semi

FDMS0300S
FDMS0300S

October 2014FDMS0300SN-Channel PowerTrench SyncFET 30 V, 49 A, 1.8 mFeatures General DescriptionThe FDMS0300S has been designed to minimize losses in Max rDS(on) = 1.8 m at VGS = 10 V, ID = 30 Apower conversion application. Advancements in both silicon and Max rDS(on) = 2.0 m at VGS = 4.5 V, ID = 25 Apackage technologies have been combined to offer the lowest

7.1. fdms0308as.pdf Size:294K _fairchild_semi

FDMS0300S
FDMS0300S

October 2014FDMS0308ASN-Channel PowerTrench SyncFETTM30 V, 49 A, 2.8 mFeatures General DescriptionThe FDMS0308AS has been designed to minimize losses in Max rDS(on) = 2.8 m at VGS = 10 V, ID = 24 Apower conversion application. Advancements in both silicon and Max rDS(on) = 3.5 m at VGS = 4.5 V, ID = 21 Apackage technologies have been combined to offer the lowest rD

7.2. fdms0302s.pdf Size:468K _fairchild_semi

FDMS0300S
FDMS0300S

October 2014FDMS0302SN-Channel PowerTrench SyncFETTM30 V, 49 A, 1.9 mFeatures General DescriptionThe FDMS0302S has been designed to minimize losses in Max rDS(on) = 1.9 m at VGS = 10 V, ID = 28 Apower conversion application. Advancements in both silicon and Max rDS(on) = 2.4 m at VGS = 4.5 V, ID = 23 Apackage technologies have been combined to offer the lowest

 7.3. fdms030n06b.pdf Size:1403K _fairchild_semi

FDMS0300S
FDMS0300S

November 2013FDMS030N06BN-Channel PowerTrench MOSFET60 V, 100 A, 3 mFeatures Description RDS(on) = 2.4 m (Typ.) @ VGS = 10 V, ID = 50 A This N-Channel MOSFET is produced using Fairchild Advanced Package and Silicon Combination for Low RDS(on) Semiconductors advance PowerTrench process that hasand High Efficiency been tailored to minimize the on-state resistance wh

7.4. fdms0306as.pdf Size:288K _fairchild_semi

FDMS0300S
FDMS0300S

January 2015FDMS0306ASN-Channel PowerTrench SyncFETTM30 V, 49 A, 2.4 mFeatures General DescriptionThe FDMS0306AS has been designed to minimize losses in Max rDS(on) = 2.4 m at VGS = 10 V, ID = 26 Apower conversion application. Advancements in both silicon and Max rDS(on) = 3.0 m at VGS = 4.5 V, ID = 23 Apackage technologies have been combined to offer the lowest rD

 7.5. fdms0308cs.pdf Size:195K _fairchild_semi

FDMS0300S
FDMS0300S

August 2010FDMS0308CSN-Channel PowerTrench SyncFETTM 30 V, 42 A, 3 m Features General DescriptionThe FDMS0308CS has been designed to minimize losses in Max rDS(on) = 3.0 m at VGS = 10 V, ID = 21 Apower conversion application. Advancements in both silicon and Max rDS(on) = 3.5 m at VGS = 4.5 V, ID = 17 Apackage technologies have been combined to offer the lowest Advanc

7.6. fdms0309as.pdf Size:309K _fairchild_semi

FDMS0300S
FDMS0300S

January 2015FDMS0309ASN-Channel PowerTrench SyncFETTM30 V, 49 A, 3.5 mFeatures General DescriptionThe FDMS0309AS has been designed to minimize losses in Max rDS(on) = 3.5 m at VGS = 10 V, ID = 21 Apower conversion application. Advancements in both silicon and Max rDS(on) = 4.3 m at VGS = 4.5 V, ID = 19 Apackage technologies have been combined to offer the lowest rD

7.7. fdms0308as.pdf Size:402K _onsemi

FDMS0300S
FDMS0300S

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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