IRFB4127 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFB4127

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 375 W

Tensión drenaje-fuente |Vds|: 200 V

Tensión compuerta-fuente |Vgs|: 20 V

Corriente continua de drenaje |Id|: 76 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 5 V

Carga de compuerta (Qg): 100 nC

Tiempo de elevación (tr): 18 nS

Conductancia de drenaje-sustrato (Cd): 410 pF

Resistencia drenaje-fuente RDS(on): 0.02 Ohm

Paquete / Caja (carcasa): TO220AB

Búsqueda de reemplazo de MOSFET IRFB4127

IRFB4127 Datasheet (PDF)

..1. irfb4127pbf.pdf Size:291K _international_rectifier

PD -97136AIRFB4127PbFHEXFET Power MOSFETApplications DVDSS200Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.l Uninterruptible Power Supply 17m:l High Speed Power SwitchingGmax. 20m:l Hard Switched and High Frequency CircuitsID 76ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized Capacitance and Avala

..2. irfb4127pbf.pdf Size:291K _infineon

..3. irfb4127.pdf Size:245K _inchange_semiconductor

isc N-Channel MOSFET Transistor IRFB4127IIRFB4127FEATURESStatic drain-source on-resistance:RDS(on) 20mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyABSOLUTE MAXIMUM

8.1. irfb4110qpbf.pdf Size:306K _international_rectifier

PD - 96138IRFB4110QPbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyVDSS 100Vl High Speed Power SwitchingRDS(on) typ.3.7ml Hard Switched and High Frequency Circuitsl Lead-Free max4.5mID180ABenefitsl Improved Gate, Avalanche and Dynamic dv/dtDRuggednessDl Fully Characterized Capacitance an

8.2. irfb4115pbf.pdf Size:231K _international_rectifier

PD - 97354BIRFB4115PbFHEXFET Power MOSFETApplications DVDSS150Vl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply RDS(on) typ.9.3ml High Speed Power SwitchingG max. 11ml Hard Switched and High Frequency CircuitsID (Silicon Limited)104ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized Ca

8.3. irfb4137pbf.pdf Size:389K _international_rectifier

IRFB4137PbF HEXFET Power MOSFET Application High Efficiency Synchronous Rectification in SMPS DVDSS 300V Uninterruptible Power Supply High Speed Power Switching RDS(on) typ. 56m Hard Switched and High Frequency Circuits G 69mmax SID 38A Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Chara

8.4. irfb4110gpbf.pdf Size:303K _international_rectifier

PD - 96214IRFB4110GPbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply VDSS 100Vl High Speed Power SwitchingRDS(on) typ.3.7ml Hard Switched and High Frequency Circuits max. 4.5mID (Silicon Limited)180A ID (Package Limited)120ABenefitsl Improved Gate, Avalanche and Dynamic dv/dtRuggednessD Dl

8.5. irfb41n15dpbf irfib41n15dpbf irfs41n15dpbf.pdf Size:337K _international_rectifier

PD - 94927AIRFB41N15DPbFIRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbFApplicationsHEXFET Power MOSFETl High frequency DC-DC convertersl Lead-FreeVDSS RDS(on) max IDBenefits150V 0.045 41Al Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avala

8.6. irfb4115gpbf.pdf Size:312K _international_rectifier

PD - 96216IRFB4115GPbFHEXFET Power MOSFETApplications DVDSS150Vl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply RDS(on) typ.9.3ml High Speed Power SwitchingG max. 11ml Hard Switched and High Frequency CircuitsID (Silicon Limited)104ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggedness Dl Fully Characterize

8.7. irfb4110pbf.pdf Size:237K _international_rectifier

PD - 97061DIRFB4110PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply VDSS 100Vl High Speed Power SwitchingRDS(on) typ.3.7ml Hard Switched and High Frequency Circuits max. 4.5mID (Silicon Limited)180A ID (Package Limited)120ABenefitsl Improved Gate, Avalanche and Dynamic dv/dtRuggednessDDl

8.8. irfb4115pbf.pdf Size:336K _infineon

IRFB4115PbFHEXFET Power MOSFETApplicationsDVDSS150Vl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyRDS(on) typ.9.3ml High Speed Power SwitchingG max. 11ml Hard Switched and High Frequency CircuitsID (Silicon Limited)104ASBenefitsDl Improved Gate, Avalanche and Dynamic dv/dtRuggednessl Fully Characterized Capacita

8.9. irfb4137pbf.pdf Size:392K _infineon

8.10. irfb41n15dpbf irfib41n15dpbf irfs41n15dpbf irfsl41n15dpbf.pdf Size:708K _infineon

IRFB41N15DPbF IRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters VDSS 150V Benefits RDS(on) max 0.045 Low Gate-to-Drain Charge to Reduce Switching Losses ID 41A Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. D D Note AN1001) Fully Characteri

8.11. irfb4110pbf.pdf Size:341K _infineon

IRFB4110PbFHEXFET Power MOSFETApplicationsDVDSS 100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.l Uninterruptible Power Supply3.7ml High Speed Power Switching max.4.5ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 180A S ID (Package Limited)120ABenefitsl Improved Gate, Avalanche and Dynamic dv/dtDRuggedness

8.12. irfb4110.pdf Size:245K _inchange_semiconductor

isc N-Channel MOSFET Transistor IRFB4110IIRFB4110FEATURESStatic drain-source on-resistance:RDS(on) 4.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

8.13. irfb4137.pdf Size:246K _inchange_semiconductor

isc N-Channel MOSFET Transistor IRFB4137IIRFB4137FEATURESStatic drain-source on-resistance:RDS(on) 69mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyABSOLUTE MAXIMUM

8.14. irfb4115.pdf Size:245K _inchange_semiconductor

isc N-Channel MOSFET Transistor IRFB4115IIRFB4115FEATURESStatic drain-source on-resistance:RDS(on) 11mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyABSOLUTE MAXIMUM

8.15. irfb41n15d.pdf Size:244K _inchange_semiconductor

isc N-Channel MOSFET Transistor IRFB41N15DIIRFB41N15DFEATURESStatic drain-source on-resistance:RDS(on) 45mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency DC-DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

8.16. irfb4110g.pdf Size:245K _inchange_semiconductor

isc N-Channel MOSFET Transistor IRFB4110G IIRFB4110GFEATURESStatic drain-source on-resistance:RDS(on) 4.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

8.17. irfb4115g.pdf Size:245K _inchange_semiconductor

isc N-Channel MOSFET Transistor IRFB4115GIIRFB4115GFEATURESStatic drain-source on-resistance:RDS(on) 11mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyABSOLUTE MAXIMU

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