All MOSFET. IRFB4127 Datasheet

 

IRFB4127 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFB4127

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 375 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 76 A

Total Gate Charge (Qg): 100 nC

Maximum Drain-Source On-State Resistance (Rds): 0.02 Ohm

Package: TO220AB

IRFB4127 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFB4127 Datasheet (PDF)

1.1. irfb4127pbf.pdf Size:291K _upd-mosfet

IRFB4127
IRFB4127

PD -97136A IRFB4127PbF HEXFET® Power MOSFET Applications D VDSS 200V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. l Uninterruptible Power Supply 17m : l High Speed Power Switching G max. 20m : l Hard Switched and High Frequency Circuits ID 76A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avala

4.1. irfb4137pbf.pdf Size:389K _upd-mosfet

IRFB4127
IRFB4127

IRFB4137PbF HEXFET® Power MOSFET Application  High Efficiency Synchronous Rectification in SMPS D VDSS 300V  Uninterruptible Power Supply High Speed Power Switching RDS(on) typ. 56m  Hard Switched and High Frequency Circuits G 69m max S ID 38A Benefits  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  Fully Chara

4.2. irfb4115gpbf.pdf Size:312K _upd-mosfet

IRFB4127
IRFB4127

PD - 96216 IRFB4115GPbF HEXFET® Power MOSFET Applications D VDSS 150V l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply RDS(on) typ. 9.3mΩ l High Speed Power Switching G max. 11mΩ l Hard Switched and High Frequency Circuits ID (Silicon Limited) 104A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness D l Fully Characterize

 4.3. irfb4110pbf.pdf Size:237K _upd-mosfet

IRFB4127
IRFB4127

PD - 97061D IRFB4110PbF Applications HEXFET® Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply VDSS 100V l High Speed Power Switching RDS(on) typ. 3.7m l Hard Switched and High Frequency Circuits max. 4.5m ID (Silicon Limited) 180A ID (Package Limited) 120A Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness D D l

4.4. irfb41n15dpbf.pdf Size:337K _upd-mosfet

IRFB4127
IRFB4127

PD - 94927A IRFB41N15DPbF IRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbF Applications HEXFET® Power MOSFET l High frequency DC-DC converters l Lead-Free VDSS RDS(on) max ID Benefits 150V 0.045 41A l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avala

 4.5. irfb4110gpbf.pdf Size:303K _upd-mosfet

IRFB4127
IRFB4127

PD - 96214 IRFB4110GPbF Applications HEXFET® Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply VDSS 100V l High Speed Power Switching RDS(on) typ. 3.7m l Hard Switched and High Frequency Circuits max. 4.5m ID (Silicon Limited) 180A ID (Package Limited) 120A Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness D D l

4.6. irfb4115pbf.pdf Size:231K _upd-mosfet

IRFB4127
IRFB4127

PD - 97354B IRFB4115PbF HEXFET® Power MOSFET Applications D VDSS 150V l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply RDS(on) typ. 9.3mΩ l High Speed Power Switching G max. 11mΩ l Hard Switched and High Frequency Circuits ID (Silicon Limited) 104A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Ca

Datasheet: IRFB38N20D , IRFB4019 , IRFB4020 , IRFB4110 , IRFB4110G , IRFB4110Q , IRFB4115 , IRFB4115G , IRF840 , IRFB41N15D , IRFB4212 , IRFB4227 , IRFB4229 , IRFB4233 , IRFB42N20D , IRFB4310 , IRFB4310G .

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