IRFB4233 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD - 97004AIRFB4233PbFPDP SWITCHFeaturesKey Parametersl Advanced process technologyVDS min 230 Vl Key parameters optimized for PDP Sustain, Energy Recovery and Pass Switch ApplicationsVDS (Avalanche) typ. 276 Vl Low EPULSE rating to reduce power dissipationmRDS(ON) typ. @ 10V 31 in PDP Sustain, Energy Recovery and PassIRP max @ TC= 100C 114 A Switch Applications

PD - 95757AIRFB4215PbFHEXFET Power MOSFETl Advanced Process TechnologyDVDSS = 60Vl Ultra Low On-Resistancel Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 9.0mGl Fast Switchingl Fully Avalanche RatedID = 115Al Optimized for SMPS Applications Sl Lead-FreeDescriptionAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced

PD- 94208SMPS MOSFETIRFB42N20DHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters200V 0.055 44A Motor Control Uninterrutible Power SuppliesBenefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001) Fully Characterized Avalanche Vo

PD - 97035DIRFB4227PbFFeaturesKey Parametersl Advanced Process TechnologyVDS max 200 Vl Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch ApplicationsVDS (Avalanche) typ. 240 Vl Low EPULSE Rating to Reduce PowermRDS(ON) typ. @ 10V 19.7 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C 130 A and Pass Switch ApplicationsTJ max 17

PD - 97078AIRFB4229PbFFeaturesl Advanced Process TechnologyKey Parametersl Key Parameters Optimized for PDP Sustain,VDS min250 V Energy Recovery and Pass Switch ApplicationsVDS (Avalanche) typ.300 Vl Low EPULSE Rating to Reduce PowerRDS(ON) typ. @ 10V m38 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C and Pass Switch Applications 91 Al Low QG f

PD- 95470SMPS MOSFETIRFB42N20DPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters200V 0.055 44Al Motor Controll Uninterrutible Power Suppliesl Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Char

PD - 96918ADIGITAL AUDIO MOSFETIRFB4212PbFFeaturesKey Parameters Key parameters optimized for Class-D audioVDS 100 V amplifier applicationsm:RDS(ON) typ. @ 10V 72.5 Low RDSON for improved efficiencyQg typ. 15 nC Low QG and QSW for better THD and improvedQsw typ. 8.3 nC efficiencyRG(int) typ. 2.2 Low QRR for better THD and lower EMITJ max 175 C

PD - 95884IRFB4215HEXFET Power MOSFETl Advanced Process TechnologyDVDSS = 60Vl Ultra Low On-Resistancel Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 9.0mGl Fast Switchingl Fully Avalanche RatedID = 115Al Optimized for SMPS Applications SDescriptionAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced processing techn

PD - 97227AIRFB4228PbFPDP SWITCHFeaturesKey Parametersl Advanced Process TechnologyVDS min150 Vl Key Parameters Optimized for PDP Sustain,VDS (Avalanche) typ.180 V Energy Recovery and Pass Switch ApplicationsRDS(ON) typ. @ 10V ml Low EPULSE Rating to Reduce Power 12 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C170 A and Pass Switch Application

PD - 97035DIRFB4227PbFFeaturesKey Parametersl Advanced Process TechnologyVDS max 200 Vl Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch ApplicationsVDS (Avalanche) typ. 240 Vl Low EPULSE Rating to Reduce PowermRDS(ON) typ. @ 10V 19.7 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C 130 A and Pass Switch ApplicationsTJ max 17

PD - 97078AIRFB4229PbFFeaturesl Advanced Process TechnologyKey Parametersl Key Parameters Optimized for PDP Sustain,VDS min250 V Energy Recovery and Pass Switch ApplicationsVDS (Avalanche) typ.300 Vl Low EPULSE Rating to Reduce PowerRDS(ON) typ. @ 10V m38 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C and Pass Switch Applications 91 Al Low QG f

PD - 97227AIRFB4228PbFPDP SWITCHFeaturesKey Parametersl Advanced Process TechnologyVDS min150 Vl Key Parameters Optimized for PDP Sustain,VDS (Avalanche) typ.180 V Energy Recovery and Pass Switch ApplicationsRDS(ON) typ. @ 10V ml Low EPULSE Rating to Reduce Power 12 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C170 A and Pass Switch Application

isc N-Channel MOSFET Transistor IRFB42N20DIIRFB42N20DFEATURESStatic drain-source on-resistance:RDS(on) 55mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency DC-DC convertersUninterruptible Power SuppliesABSOLUTE MAXIMUM RATINGS(T =2

isc N-Channel MOSFET Transistor IRFB4228IIRFB4228FEATURESStatic drain-source on-resistance:RDS(on) 15mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION175 operating junction temperature and high repetitive peakcurrent capabilityABSOLUTE MAXIMUM

isc N-Channel MOSFET Transistor IRFB4227IIRFB4227FEATURESStatic drain-source on-resistance:RDS(on) 24mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION175 operating junction temperature and high repetitive peakcurrent capabilityABSOLUTE MAXIMUM

isc N-Channel MOSFET Transistor IRFB4229IIRFB4229FEATURESStatic drain-source on-resistance:RDS(on) 46mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION175 operating junction temperature and high repetitive peakcurrent capabilityABSOLUTE MAXIMUM

isc N-Channel MOSFET Transistor IRFB4212IIRFB4212FEATURESStatic drain-source on-resistance:RDS(on) 72.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)a