All MOSFET. IRFB4233 Datasheet

 

IRFB4233 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFB4233

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 370 W

Maximum Drain-Source Voltage |Vds|: 230 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 56 A

Total Gate Charge (Qg): 120 nC

Maximum Drain-Source On-State Resistance (Rds): 0.037 Ohm

Package: TO220AB

IRFB4233 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFB4233 Datasheet (PDF)

1.1. irfb4233pbf.pdf Size:283K _upd-mosfet

IRFB4233
IRFB4233

PD - 97004A IRFB4233PbF PDP SWITCH Features Key Parameters l Advanced process technology VDS min 230 V l Key parameters optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 276 V l Low EPULSE rating to reduce power dissipation m RDS(ON) typ. @ 10V 31 in PDP Sustain, Energy Recovery and Pass IRP max @ TC= 100°C 114 A Switch Applications

4.1. irfb4229pbf.pdf Size:292K _upd-mosfet

IRFB4233
IRFB4233

PD - 97078A IRFB4229PbF Features l Advanced Process Technology Key Parameters l Key Parameters Optimized for PDP Sustain, VDS min 250 V Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 300 V l Low EPULSE Rating to Reduce Power RDS(ON) typ. @ 10V m 38 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100°C and Pass Switch Applications 91 A l Low QG f

4.2. irfb4215.pdf Size:201K _upd-mosfet

IRFB4233
IRFB4233

PD - 95884 IRFB4215 HEXFET® Power MOSFET l Advanced Process Technology D VDSS = 60V l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature RDS(on) = 9.0mΩ G l Fast Switching l Fully Avalanche Rated ID = 115Aˆ l Optimized for SMPS Applications S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techn

 4.3. irfb4212pbf.pdf Size:293K _upd-mosfet

IRFB4233
IRFB4233

PD - 96918A DIGITAL AUDIO MOSFET IRFB4212PbF Features Key Parameters • Key parameters optimized for Class-D audio VDS 100 V amplifier applications m: RDS(ON) typ. @ 10V 72.5 • Low RDSON for improved efficiency Qg typ. 15 nC • Low QG and QSW for better THD and improved Qsw typ. 8.3 nC efficiency RG(int) typ. 2.2 Ω • Low QRR for better THD and lower EMI TJ max 175 °C

4.4. irfb4227pbf.pdf Size:284K _upd-mosfet

IRFB4233
IRFB4233

PD - 97035D IRFB4227PbF Features Key Parameters l Advanced Process Technology VDS max 200 V l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 240 V l Low EPULSE Rating to Reduce Power m RDS(ON) typ. @ 10V 19.7 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100°C 130 A and Pass Switch Applications TJ max 17

 4.5. irfb4228pbf.pdf Size:292K _upd-mosfet

IRFB4233
IRFB4233

PD - 97227A IRFB4228PbF PDP SWITCH Features Key Parameters l Advanced Process Technology VDS min 150 V l Key Parameters Optimized for PDP Sustain, VDS (Avalanche) typ. 180 V Energy Recovery and Pass Switch Applications RDS(ON) typ. @ 10V m l Low EPULSE Rating to Reduce Power 12 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100°C 170 A and Pass Switch Application

4.6. irfb4215pbf.pdf Size:231K _upd-mosfet

IRFB4233
IRFB4233

PD - 95757A IRFB4215PbF HEXFET® Power MOSFET l Advanced Process Technology D VDSS = 60V l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature RDS(on) = 9.0mΩ G l Fast Switching l Fully Avalanche Rated ID = 115Aˆ l Optimized for SMPS Applications S l Lead-Free Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced

4.7. irfb42n20dpbf.pdf Size:169K _upd-mosfet

IRFB4233
IRFB4233

PD- 95470 SMPS MOSFET IRFB42N20DPbF HEXFET® Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 200V 0.055Ω 44A l Motor Control l Uninterrutible Power Supplies l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Char

4.8. irfb42n20d.pdf Size:215K _international_rectifier

IRFB4233
IRFB4233

PD- 94208 SMPS MOSFET IRFB42N20D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 200V 0.055? 44A Motor Control Uninterrutible Power Supplies Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage

4.9. irfb4212.pdf Size:244K _inchange_semiconductor

IRFB4233
IRFB4233

isc N-Channel MOSFET Transistor IRFB4212,IIRFB4212 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤72.5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a

4.10. irfb4227.pdf Size:244K _inchange_semiconductor

IRFB4233
IRFB4233

isc N-Channel MOSFET Transistor IRFB4227,IIRFB4227 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤24mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·175℃ operating junction temperature and high repetitive peak current capability ·ABSOLUTE MAXIMUM

4.11. irfb4228.pdf Size:245K _inchange_semiconductor

IRFB4233
IRFB4233

isc N-Channel MOSFET Transistor IRFB4228,IIRFB4228 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤15mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·175℃ operating junction temperature and high repetitive peak current capability ·ABSOLUTE MAXIMUM

4.12. irfb4229.pdf Size:245K _inchange_semiconductor

IRFB4233
IRFB4233

isc N-Channel MOSFET Transistor IRFB4229,IIRFB4229 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤46mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·175℃ operating junction temperature and high repetitive peak current capability ·ABSOLUTE MAXIMUM

4.13. irfb42n20d.pdf Size:245K _inchange_semiconductor

IRFB4233
IRFB4233

isc N-Channel MOSFET Transistor IRFB42N20D,IIRFB42N20D ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤55mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High frequency DC-DC converters ·Uninterruptible Power Supplies ·ABSOLUTE MAXIMUM RATINGS(T =2

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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