IRFB812 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFB812
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 78 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 3.6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 22 nS
Cossⓘ - Capacitancia de salida: 47 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.2 Ohm
Encapsulados: TO220AB
Búsqueda de reemplazo de IRFB812 MOSFET
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IRFB812 datasheet
irfb812pbf.pdf
PD -97693 IRFB812PbF HEXFET Power MOSFET Applications Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID Uninterruptible Power Supplies Motor Control applications 500V 1.75 75ns 3.6A Features and Benefits Fast body diode eliminates the need for external diodes in ZVS applications. Lower Gate charge results in simpler drive requirements. Higher Ga
irfb812.pdf
isc N-Channel MOSFET Transistor IRFB812 IIRFB812 FEATURES Static drain-source on-resistance RDS(on) 2.2 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Uninterruptible power supplies Motor control applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a
auirfb8409 auirfs8409 auirfsl8409.pdf
AUIRFB8409 AUTOMOTIVE GRADE AUIRFS8409 AUIRFSL8409 Features HEXFET Power MOSFET l Advanced Process Technology D l New Ultra Low On-Resistance VDSS 40V l 175 C Operating Temperature RDS(on) (SMD) typ. 0.97m l Fast Switching max. 1.2m l Repetitive Avalanche Allowed up to Tjmax G l Lead-Free, RoHS Compliant ID (Silicon Limited) 409A l Automotive Qualified * ID (Package Li
auirfb8405.pdf
AUTOMOTIVE GRADE AUIRFB8405 Features HEXFET Power MOSFET Advanced Process Technology D New Ultra Low On-Resistance VDSS 40V 175 C Operating Temperature RDS(on) typ.2.1m Fast Switching Repetitive Avalanche Allowed up to Tjmax max. 2.5m Lead-Free, RoHS Compliant G ID (Silicon Limited) 185A Automotive Qualified * ID (Package Limited) 120A S
Otros transistores... IRFB4615 , IRFB4620 , IRFB4710 , IRFB52N15D , IRFB5615 , IRFB5620 , IRFB59N10D , IRFB61N15D , 2SK3878 , IRFBA1404P , IRFBA1405P , IRFBA90N20D , IRFH3702 , IRFH3707 , IRFH5004 , IRFH5006 , IRFH5007 .
History: FDB024N08BL7
History: FDB024N08BL7
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