IRFB812 Datasheet and Replacement

PD -97693IRFB812PbFHEXFET Power MOSFETApplications Zero Voltage Switching SMPSTrr typ.VDSS RDS(on) typ. ID Uninterruptible Power Supplies Motor Control applications500V 1.75 75ns 3.6AFeatures and Benefits Fast body diode eliminates the need for externaldiodes in ZVS applications. Lower Gate charge results in simpler drive requirements. Higher Ga

isc N-Channel MOSFET Transistor IRFB812IIRFB812FEATURESStatic drain-source on-resistance:RDS(on) 2.2Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUninterruptible power suppliesMotor control applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

AUIRFB8409AUTOMOTIVE GRADE AUIRFS8409AUIRFSL8409FeaturesHEXFET Power MOSFETl Advanced Process TechnologyDl New Ultra Low On-Resistance VDSS 40Vl 175C Operating TemperatureRDS(on) (SMD) typ. 0.97ml Fast Switching max. 1.2ml Repetitive Avalanche Allowed up to TjmaxGl Lead-Free, RoHS Compliant ID (Silicon Limited) 409Al Automotive Qualified *ID (Package Li

AUTOMOTIVE GRADEAUIRFB8405FeaturesHEXFET Power MOSFET Advanced Process TechnologyD New Ultra Low On-ResistanceVDSS 40V 175C Operating TemperatureRDS(on) typ.2.1m Fast Switching Repetitive Avalanche Allowed up to Tjmax max. 2.5m Lead-Free, RoHS Compliant GID (Silicon Limited) 185A Automotive Qualified *ID (Package Limited) 120A S

AUIRFB8407AUTOMOTIVE GRADEAUIRFS8407AUIRFSL8407FeaturesHEXFET Power MOSFETl Advanced Process Technologyl New Ultra Low On-ResistanceVDSS 40VDl 175C Operating TemperatureRDS(on) typ. 1.4ml Fast Switching l Repetitive Avalanche Allowed up to Tjmax(SMD version) max. 1.8m l Lead-Free, RoHS CompliantG250AID (Silicon Limited) Automotive Qualified *S

IRFB830(BRCS830B) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-263 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high