IRFH5110 Todos los transistores

 

IRFH5110 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFH5110

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 3.6 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 11 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 48 nC

Resistencia drenaje-fuente RDS(on): 0.0124 Ohm

Empaquetado / Estuche: PQFN5X6

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IRFH5110 Datasheet (PDF)

1.1. irfh5110pbf.pdf Size:250K _international_rectifier

IRFH5110
IRFH5110

IRFH5110PbF HEXFET® Power MOSFET VDS 100 V RDS(on) max 12.4 mΩ (@VGS = 10V) Qg (typical) 54 nC RG (typical) 1.5 Ω ID PQFN 5X6 mm 63 A (@Tc(Bottom) = 25°C) Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications Features and Benefits Benefits Features Low RDSon (< 12.4 mΩ) Lower Conduction Losses Low Therm

4.1. irfh5106pbf.pdf Size:331K _upd-mosfet

IRFH5110
IRFH5110

PD -95959 IRFH5106PbF HEXFET® Power MOSFET VDS 60 V RDS(on) max 5.6 mΩ (@VGS = 10V) Qg (typical) 50 nC RG (typical) 1.4 Ω ID 100 A PQFN 5X6 mm (@Tc(Bottom) = 25°C) Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications • Boost Converters Features and Benefits Features Benefits Low RDSon (≤ 5.6mΩ)

4.2. irfh5106pbf.pdf Size:257K _international_rectifier

IRFH5110
IRFH5110

IRFH5106PbF HEXFET® Power MOSFET VDS 60 V RDS(on) max 5.6 mΩ (@VGS = 10V) Qg (typical) 50 nC RG (typical) 1.4 Ω ID 100 A PQFN 5X6 mm (@Tc(Bottom) = 25°C) Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications • Boost Converters Features and Benefits Features Benefits Low RDSon (≤ 5.6mΩ) Lower Conducti

 4.3. irfh5104pbf.pdf Size:256K _international_rectifier

IRFH5110
IRFH5110

IRFH5104PbF HEXFET® Power MOSFET VDS 40 V RDS(on) max 3.5 mΩ (@VGS = 10V) Qg (typical) 53 nC RG (typical) 1.4 Ω ID 100 A (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications • Boost Converters Features and Benefits Features Benefits Low RDSon (≤ 3.5mΩ) Lower Conductio

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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