IRFH5250D Todos los transistores

 

IRFH5250D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFH5250D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 72 nS
   Cossⓘ - Capacitancia de salida: 1730 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0014 Ohm
   Paquete / Cubierta: PQFN5X6

 Búsqueda de reemplazo de MOSFET IRFH5250D

 

Principales características: IRFH5250D

 ..1. Size:292K  international rectifier
irfh5250dpbf.pdf pdf_icon

IRFH5250D

IRFH5250DPbF HEXFET Power MOSFET VDS 25 V RDS(on) max 1.4 m (@VGS = 10V) VSD max 0.6 V (@IS = 5.0A) trr (typical) 27 ns ID PQFN 5X6 mm 100 A (@Tmb = 25 C) Applications Synchronous MOSFET for high frequency buck converters Features and Benefits Benefits Features Low RDSon (

 6.1. Size:261K  international rectifier
irfh5250pbf.pdf pdf_icon

IRFH5250D

IRFH5250PbF HEXFET Power MOSFET VDS 25 V RDS(on) max 1.15 m (@VGS = 10V) Qg (typical) 52 nC RG (typical) 1.3 ID 100 A PQFN 5X6 mm (@Tmb = 25 C) Applications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Battery Operated DC Motor Inverter MOSFET Features and Benefits Benefits Features Low RDSon (

 7.1. Size:298K  international rectifier
irfh5255pbf.pdf pdf_icon

IRFH5250D

PD -96289 IRFH5255PbF HEXFET Power MOSFET VDS 25 V RDS(on) max 6.0 m (@VGS = 10V) Qg (typical) 7.0 nC RG (typical) 0.6 ID PQFN 5X6 mm 51 A (@Tc(Bottom) = 25 C) Applications Control MOSFET for high Frequency Buck Converters Features and Benefits Benefits Features Low Charge (typical 7nC) Lower Switching Losses Low Rg (typical 0.6 ) Lower Switching Losses

 8.1. Size:210K  international rectifier
irfh5210pbf.pdf pdf_icon

IRFH5250D

PD - 97490A IRFH5210PbF HEXFET Power MOSFET VDS 100 V RDS(on) max 14.9 m (@VGS = 10V) Qg (typical) 40 nC RG (typical) 1.7 ID 55 A PQFN 5X6 mm (@Tc(Bottom) = 25 C) Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Features Benefits Low RDSon ( 14.9m

Otros transistores... IRFH5110 , IRFH5204 , IRFH5206 , IRFH5207 , IRFH5210 , IRFH5215 , IRFH5220 , IRFH5250 , STP80NF70 , IRFH5255 , IRFH5300 , IRFH5301 , IRFH5302 , IRFH5302D , IRFH5303 , IRFH5304 , IRFH5306 .

History: AP40N02D

 

 
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