IRFH5250D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFH5250D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.6 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 40 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.35 VQgⓘ - Carga de la puerta: 39 nC
trⓘ - Tiempo de subida: 72 nS
Cossⓘ - Capacitancia de salida: 1730 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0014 Ohm
Paquete / Cubierta: PQFN5X6
Búsqueda de reemplazo de MOSFET IRFH5250D
IRFH5250D Datasheet (PDF)
irfh5250dpbf.pdf
IRFH5250DPbFHEXFET Power MOSFETVDS 25 VRDS(on) max 1.4 m(@VGS = 10V)VSD max 0.6 V(@IS = 5.0A)trr (typical) 27 nsID PQFN 5X6 mm100 A(@Tmb = 25C)Applications Synchronous MOSFET for high frequency buck convertersFeatures and BenefitsBenefitsFeaturesLow RDSon (
irfh5250dpbf.pdf
IRFH5250DPbFHEXFET Power MOSFETVDS 25 VRDS(on) max 1.4 m(@VGS = 10V)VSD max 0.6 V(@IS = 5.0A)trr (typical) 27 nsID PQFN 5X6 mm100 A(@Tmb = 25C)Applications Synchronous MOSFET for high frequency buck convertersFeatures and BenefitsBenefitsFeaturesLow RDSon (
irfh5250pbf.pdf
PD -96265IRFH5250PbFHEXFET Power MOSFETVDS25 VRDS(on) max 1.15 m(@VGS = 10V)Qg (typical)52 nCRG (typical)1.3ID PQFN 5X6 mm100 A(@Tc(Bottom) = 25C)Applications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Battery Operated DC Motor Inverter MOSFETFeatures and BenefitsBenefitsFeaturesLow RDSon (
irfh5250pbf.pdf
IRFH5250PbFHEXFET Power MOSFETVDS 25 VRDS(on) max 1.15 m(@VGS = 10V)Qg (typical) 52 nCRG (typical) 1.3 ID 100 APQFN 5X6 mm(@Tmb = 25C)Applications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Battery Operated DC Motor Inverter MOSFETFeatures and BenefitsBenefitsFeaturesLow RDSon (
irfh5255pbf.pdf
PD -96289IRFH5255PbFHEXFET Power MOSFETVDS25 VRDS(on) max 6.0 m(@VGS = 10V)Qg (typical)7.0 nCRG (typical)0.6 ID PQFN 5X6 mm51 A(@Tc(Bottom) = 25C)Applications Control MOSFET for high Frequency Buck ConvertersFeatures and BenefitsBenefitsFeaturesLow Charge (typical 7nC) Lower Switching LossesLow Rg (typical 0.6) Lower Switching Losses
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918