IRFH5302D Todos los transistores

 

IRFH5302D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFH5302D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 29 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 30 nS
   Cossⓘ - Capacitancia de salida: 680 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0025 Ohm
   Paquete / Cubierta: PQFN5X6
 

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IRFH5302D datasheet

 ..1. Size:241K  international rectifier
 irfh5302dpbf.pdf pdf_icon

IRFH5302D

IRFH5302DPbF HEXFET Power MOSFET VDS 30 V RDS(on) max 2.5 m (@VGS = 10V) VSD max 0.65 V (@IS = 5.0A) trr (typical) 19 ns ID PQFN 5X6 mm 100 A (@Tc(Bottom) = 25 C) Applications Synchronous MOSFET for high frequency buck converters Features and Benefits Benefits Features Low RDSon (... See More ⇒

 6.1. Size:240K  1
 irfh5302trpbf.pdf pdf_icon

IRFH5302D

IRFH5302PbF HEXFET Power MOSFET VDS 30 V RDS(on) max 2.1 m (@VGS = 10V) Qg (typical) 29 nC RG (typical) 1.6 ID 100 A (@Tc(Bottom) = 25 C) PQFN 5X6 mm Applications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Synchronous MOSFET for buck converters Battery Operated DC Motor Inverter MOSFET Features and Benefits Benefits Features ) Low RDSon (... See More ⇒

 6.2. Size:240K  international rectifier
 irfh5302pbf.pdf pdf_icon

IRFH5302D

IRFH5302PbF HEXFET Power MOSFET VDS 30 V RDS(on) max 2.1 m (@VGS = 10V) Qg (typical) 29 nC RG (typical) 1.6 ID 100 A (@Tc(Bottom) = 25 C) PQFN 5X6 mm Applications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Synchronous MOSFET for buck converters Battery Operated DC Motor Inverter MOSFET Features and Benefits Benefits Features ) Low RDSon (... See More ⇒

 6.3. Size:209K  international rectifier
 irfh5302.pdf pdf_icon

IRFH5302D

PD -97156 IRFH5302PbF HEXFET Power MOSFET VDS 30 V RDS(on) max 2.1 m (@VGS = 10V) Qg (typical) 29 nC RG (typical) 1.6 ID 100 A (@Tc(Bottom) = 25 C) PQFN 5X6 mm Applications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Synchronous MOSFET for buck converters Battery Operated DC Motor Inverter MOSFET Features and Benefits Benefits Features ... See More ⇒

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Otros transistores... IRFH5215 , IRFH5220 , IRFH5250 , IRFH5250D , IRFH5255 , IRFH5300 , IRFH5301 , IRFH5302 , 4N60 , IRFH5303 , IRFH5304 , IRFH5306 , IRFH5406 , IRFH6200 , IRFH7914 , IRFH7921 , IRFH7932 .

 

 
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