IRFH5302D Todos los transistores

 

IRFH5302D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFH5302D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 3.6 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 29 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 26 nC

Resistencia drenaje-fuente RDS(on): 0.0025 Ohm

Empaquetado / Estuche: PQFN5X6

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IRFH5302D Datasheet (PDF)

1.1. irfh5302dpbf.pdf Size:258K _international_rectifier

IRFH5302D
IRFH5302D

IRFH5302DPbF HEXFET® Power MOSFET VDS 30 V RDS(on) max 2.5 mΩ (@VGS = 10V) VSD max 0.65 V (@IS = 5.0A) trr (typical) 19 ns ID PQFN 5X6 mm 100 A (@Tc(Bottom) = 25°C) Applications • Synchronous MOSFET for high frequency buck converters Features and Benefits Benefits Features Low RDSon (<2.5mΩ) Lower Conduction Losses Schottky Intrinsic Diode with Low Forward Voltag

2.1. irfh5302.pdf Size:209K _international_rectifier

IRFH5302D
IRFH5302D

PD -97156 IRFH5302PbF HEXFET® Power MOSFET VDS 30 V RDS(on) max 2.1 mΩ (@VGS = 10V) Qg (typical) 29 nC RG (typical) 1.6 Ω ID 100 A (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Synchronous MOSFET for buck converters • Battery Operated DC Motor Inverter MOSFET Features and Benefits Benefits Features ≤ Ω

 3.1. irfh5301pbf.pdf Size:304K _upd-mosfet

IRFH5302D
IRFH5302D

PD -96276 IRFH5301PbF HEXFET® Power MOSFET VDS 30 V RDS(on) max 1.85 mΩ (@VGS = 10V) Qg (typical) 37 nC RG (typical) 1.5 Ω ID PQFN 5X6 mm 100 A (@Tc(Bottom) = 25°C) Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Synchronous MOSFET for Buck Converters • Battery Operated DC Motor Inverter MOSFET Features and Benefits Benefits Features Low

3.2. irfh5306pbf.pdf Size:205K _upd-mosfet

IRFH5302D
IRFH5302D

PD - 97429 IRFH5306PbF HEXFET® Power MOSFET VDS 30 V RDS(on) max 8.1 mΩ (@VGS = 10V) Qg (typical) 7.8 nC RG (typical) 1.4 Ω ID 44 A (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • Control MOSFET for buck converters Features and Benefits Features Benefits Low charge (typical 7.8nC) Lower switching losses Low thermal resistance to PCB (< 4.9°C/W) Increased power density

 3.3. irfh5304pbf.pdf Size:340K _upd-mosfet

IRFH5302D
IRFH5302D

PD -97447 IRFH5304PbF HEXFET® Power MOSFET VDS 30 V RDS(on) max 4.5 mΩ (@VGS = 10V) Qg (typical) 16 nC ID 79 A (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • Control MOSFET for buck converters Features and Benefits Benefits Features Low charge (typical 16nC) Lower Switching Losses Low Thermal Resistance to PCB (<2.7°C/W) Increased Power Density 100% Rg tested Incre

3.4. irfh5300pbf.pdf Size:272K _upd-mosfet

IRFH5302D
IRFH5302D

PD -97410A IRFH5300PbF HEXFET® Power MOSFET VDS 30 V RDS(on) max 1.4 m (@VGS = 10V) Qg (typical) 50 nC RG (typical) 1.3 ID 100 A PQFN 5X6 mm (@Tc(Bottom) = 25°C) Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Battery Operated DC Motor Inverter MOSFET Features and Benefits Benefits Features Low RDSon (≤ 1.4mΩ) Lower Conduction Losses Low The

 3.5. irfh5303pbf.pdf Size:341K _upd-mosfet

IRFH5302D
IRFH5302D

PD -97467 IRFH5303PbF HEXFET® Power MOSFET VDS 30 V RDS(on) max 4.2 m (@VGS = 10V) Qg (typical) 15 nC RG (typical) 0.6 ID 82 A (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • Control MOSFET for high frequency buck converters Features and Benefits Benefits Features Low charge (typical 15nC) Lower Switching Losses Low Rg (typical 0.6 Ω) Lower Switching Losses Low Therm

3.6. irfh5301pbf.pdf Size:253K _international_rectifier

IRFH5302D
IRFH5302D

IRFH5301PbF HEXFET® Power MOSFET VDS 30 V RDS(on) max 1.85 mΩ (@VGS = 10V) Qg (typical) 37 nC RG (typical) 1.5 Ω ID PQFN 5X6 mm 100 A (@Tc(Bottom) = 25°C) Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Synchronous MOSFET for Buck Converters • Battery Operated DC Motor Inverter MOSFET Features and Benefits Benefits Features Low RDSon (<1.85

3.7. irfh5306pbf.pdf Size:255K _international_rectifier

IRFH5302D
IRFH5302D

IRFH5306PbF HEXFET® Power MOSFET VDS 30 V RDS(on) max 8.1 mΩ (@VGS = 10V) Qg (typical) 7.8 nC RG (typical) 1.4 Ω ID 44 A (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • Control MOSFET for buck converters Features and Benefits Features Benefits Low charge (typical 7.8nC) Lower switching losses Low thermal resistance to PCB (< 4.9°C/W) Increased power density 100% Rg te

3.8. irfh5304pbf.pdf Size:254K _international_rectifier

IRFH5302D
IRFH5302D

IRFH5304PbF HEXFET® Power MOSFET VDS 30 V RDS(on) max 4.5 mΩ (@VGS = 10V) Qg (typical) 16 nC ID 79 A (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • Control MOSFET for buck converters Features and Benefits Benefits Features Low charge (typical 16nC) Lower Switching Losses Low Thermal Resistance to PCB (<2.7°C/W) Increased Power Density 100% Rg tested Increased Reliab

3.9. irfh5300pbf.pdf Size:274K _international_rectifier

IRFH5302D
IRFH5302D

IRFH5300PbF HEXFET® Power MOSFET VDS 30 V RDS(on) max 1.4 m (@VGS = 10V) Qg (typical) 50 nC RG (typical) 1.3 ID 100 A PQFN 5X6 mm (@Tc(Bottom) = 25°C) Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Battery Operated DC Motor Inverter MOSFET Features and Benefits Benefits Features Low RDSon (≤ 1.4mΩ) Lower Conduction Losses Low Thermal Resista

3.10. irfh5303pbf.pdf Size:344K _international_rectifier

IRFH5302D
IRFH5302D

PD -97467 IRFH5303PbF HEXFET® Power MOSFET VDS 30 V RDS(on) max 4.2 m (@VGS = 10V) Qg (typical) 15 nC RG (typical) 0.6 ID 82 A (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • Control MOSFET for high frequency buck converters Features and Benefits Benefits Features Low charge (typical 15nC) Lower Switching Losses Low Rg (typical 0.6 Ω) Lower Switching Losses Low Therm

Otros transistores... IRFH5215 , IRFH5220 , IRFH5250 , IRFH5250D , IRFH5255 , IRFH5300 , IRFH5301 , IRFH5302 , 2SK3568 , IRFH5303 , IRFH5304 , IRFH5306 , IRFH5406 , IRFH6200 , IRFH7914 , IRFH7921 , IRFH7932 .

 
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